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Электронный компонент: 1N458ATR

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2004 Fairchild Semiconductor Corporation
1N458A, Rev. A
1N458A
Small Signal Diode
Absolute Maximum Ratings *
T
A
= 25
C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
T
A
=25
C unless otherwise noted
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
150
V
I
F(AV)
Average Rectified Forward Current
500
mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
T
STG
Storage Temperature Range
-65 to +200
C
T
J
Operating Junction Temperature
175
C
Symbol
Parameter
Value
Units
P
D
Power Dissipation
500
mW
R
JA
Thermal Resistance, Junction to Ambient
300
C
Symbol
Parameter
Test Conditions
Min.
Max.
Units
V
R
Breakdown Voltage
I
R
= 100
A
150
V
V
F
Forward Voltage
I
F
= 100mA
1.0
V
I
R
Reverse Leakage
V
R
= 125V
V
R
= 125V, T
A
= 150
C
25
5
A
A
1N458A
DO-35
COLOR BAND DENOTES CATHODE
2004 Fairchild Semiconductor Corporation
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Advance Information
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Rev. I11
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