0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45
0.040 (1.02)
1
3
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
0.255 (6.48)
ANODE
(CASE)
0.020 (0.51) 2X
1. Derate power dissipation linearly 1.70 mW/C above 25C ambient.
2. Derate power dissipation linearly 13.0 mW/C above 25C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16"
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
PACKAGE DIMENSIONS
FEATURES
Good optical to mechanical alignment
Mechanically and wavelength matched to the
TO-18 series phototransistor
Hermetically sealed package
High irradiance level
(*) Indicates JEDEC registered values
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-65 to +125
C
*Storage Temperature
T
STG
-65 to +150
C
*Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec
C
*Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec
C
*Continuous Forward Current
I
F
100
mA
*Forward Current (pw, 1s; 200Hz)
I
F
10
A
*Reverse Voltage
V
R
3
V
*Power Dissipation (T
A
= 25C)
(1)
P
D
170
mW
Power Dissipation (T
C
= 25C)
(2)
P
D
1.3
W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1N6266
GaAs INFRARED EMITTING DIODE
DESCRIPTION
The 1N6266 is a 940 nm LED in a
narrow angle, TO-46 package.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
*Peak Emission Wavelength
I
F
= 100 mA
P
935
--
955
nm
Emission Angle at 1/2 Power
--
10
--
Deg.
Forward Voltage
I
F
= 100 mA
V
F
--
--
1.7
V
*Reverse Leakage Current
V
R
= 3 V
I
R
--
--
10
A
*Radiant Intensity
I
F
= 100 mA
Ie
25
--
--
mW/sr
Rise Time 0-90% of output
t
r
--
1.0
--
s
Fall Time 100-10% of output
t
f
--
1.0
--
s
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
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3/12/01
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10
.01
.02
.04 .06 .08 0.1
.2
.4
.6
.8 1.0
2
4
6
8 10
0.1
0
.01
.02
.04
.06
.08
0.1
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
100
1000
10,000
100,000
f = FREQUENCY - HERTZ
I
F
= INPUT CURRENT (mA)
T
A
= MAXIMUM ALLO
W
ABLE AMBIENT
TEMPERA
TURE (C)
I
F
= FOR
W
ARD CURRENT (A)
Fig.1 Maximum Pulse Capability
.01
0
2
3
1
4
5
7
9
6
8
10
.02
.04 .06 .08 .1
.01
.02
.04
.06
.08
.10
I
F
- INPUT CURRENT (A)
I
e
= NORMALIZED RADIANT INTENSITY
Fig.3 Radiant Intensity vs.
Input Current le/ l
V
F
- FORWARD VOLTAGE (V)
Fig.4 Forward Voltage vs.
Forward Current
I
F
- INPUT CURRENT (mA)
Fig.2 Maximum Temperature vs. Input Current
PULSE
WIDTH = 2 S
10 S
50 S
100 S
100% Duty Cycle
10% Duty
Cycle
1% Duty
Cycle
Normalized to:
I
F
= 100 mA
= .01 Steradians
T
A
= 25C
.2
.4
.6 .8 1.0
2
4
6
8 10
.2
.4
.6
.8
1.0
2
4
6
8
10
20
40
60
.80
100
0.2
0.4
0.6
0.8
1.0
2.0
4.0
6.0
8.0
10.0
1N6266
GaAs INFRARED EMITTING DIODE
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DS300278
MAXIMUM RATINGS CURVES
0
2
4
6
8
10
0.9
-50
.01
.02
.04
.08
.10
.06
-25
0
25
50
75
100
125
150
1.0
1.1
1.2
1.3
1.4
1.5
880
0
0.2
0.4
0.6
0.8
1.0
900
920
940
960
980
1000
1020
I
F
= FOR
W
ARD CURRENT (mA)
I
R
= NORMALIZED PO
WER OUTPUT
RELA
TIVE OUTPUT
V
F
- FORWARD VOLTAGE (V)
Fig.5 Forward Voltage vs. Forward Current
T
A
- AMBIENT TEMPERATURE (C)
Fig.7 Output vs. Temperature
- WAVELENGTH - NANOMETERS
Fig.6 Spectral Output
20
40
60
80
100
T
A
= 100C
25C
-55C
Normalized to:
I
F
= 100 mA
= .01 Steradians
T
A
= 25C
Silicon Photodiode
as Detector
I
F
= 1 A
I
F
= 100 mA
I
F
= 10 mA
.2
.4
.8
1.0
.6
2
4
8
10
6
20
40
80
100
60
1N6266
GaAs INFRARED EMITTING DIODE
MAXIMUM RATINGS CURVES
DS300278
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1N6266
GaAs INFRARED EMITTING DIODE
INFRARED EMITTING DIODE RADIANT INTENSITY
The design of an Infrared Emitting Diode (IRED)-photode-
tector system normally requires the designer to determine
the minimum amount of infrared irradiance received by the
photodetector, which then allows definition of the photode-
tector current. Prior to the introduction of the 1N6266, the
best method of estimating the photodetector received
infrared was to geometrically proportion the piecewise inte-
gration of the typical beam pattern with the specified mini-
mum total power output of the IRED. However, due to
inconsistencies of the IRED integral lenses and the beam
lobes, this procedure will not provide a valid estimation.
The 1N6266 now provides the designer specifications
which precisely define the infrared beam along the device's
mechanical axis. The 1N6266 is a premium device select-
ed to give a minimum radiant intensity of 25 mW/steradian
into the 0.01 steradians referenced by the the device's
mechanical axis and seating plane. Radiant intensity is the
IRED beam power output, within a specified solid angle,
per unit solid angle.
A quick review of geometry indicates that a steradian is a
unit of solid angle, referenced to the center of a sphere,
defined by 4
times the ratio of the area projected by the
solid angle to the area of the sphere. The solid angle is
equal to the projected area divided by the squared radius.
Steradians = 4
A/4
R
2
= A/R
2
=
As the projected area has a circular periphery, a geometric
integration will solve to show the relationship of the
Cartesian angle (
) of the cone, (from the center of the
sphere) to the projected area.
= 2 (1 - COS
)
2
Radiant intensity provides an easy, accurate tool to calcu-
late the infrared power received by a photodetector locat-
ed on the IRED axis. As the devices are selected for
beam characteristics, the calculated results are valid for
worst case analysis. For many applications a simple
approximation for photodetector irradiance is:
H
Ie/d
2
, in mw/cm
2
where d is the distance from the IRED to the detector in
cm.
IRED power output, and therefore Ie, depends on IRED
current. This variation ( I
e
/ I) is documented in Figure 3,
and completes the approximation: H = I
e
/d
2
( I
e
/ I). This
normally gives a conservative value of irradiance. For
more accurate results, the effect of precise angle viewed
by the detector must be considered. This is documented
in figure 8 ( I
e
/
) giving:
H = I
e
/d
2
( I
e
/
) in mw/cm
2
For worst case designs, temperature coefficients and tol-
erances must be considered.
The minimum output current of the detector (I
L
) can be
determined for a given distance (d) of the detector from
the IRED.
I
L
= (S)H
(S) I
e
/d
2
or
I
L
= (S)H = (S) (I
e
/d
2
) ( I
e
/
) ( I
e
/ I)
where S is the sensitivity of the detector in terms of out-
put current per unit irradiance from a GaAs source.
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DS300278
d
CL
IRED Seating Plane
IRED
Area "A"
Receives
Power "Pw"
SPHERE
Centered on
IRED Axis
C and
Seating Plane
2
= A/d
2
= 2 (I - COS
) Steradians
I
e
= Pw/ mW/Steradians
H = Pw/A = I
e
/d
2
mW/cm
2
L
1N6266
GaAs INFRARED EMITTING DIODE
.001
.002
.004 .006
.01
1
2
1
3
1
4
1
5
1
7
1
10
1
15
1
20
1
60
1
45
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
.02
.04 .06.08 .1
.6 .8 1.0
Steradians -
Degrees -
Normalized to:
IF = 100 mA
= .01 Steradians
TA = 25C
= A
r
2
2
= 2 (I - COS
)
r
I
F
= NORMALIZED RADIANT INTENSITY
Fig.8 Intensity and Power vs. Angle l
e
/
AREA A
TYPICAL CHARACTERISTICS
MATCHING A PHOTOTRANSISTOR WITH 1N6266
Assume a system requiring a 10 mA I
L
at an IRED to detector spacing of 2 cm (seating plane to seating plane), with
bias conditions at specification points.
Given: d
1
= 2 cm, I
L
= 10 mA min.; I
e
= 25 mW/Steradian
Then: H
1
I
e
/d
1
2
= 25/(2)
2
= 6.25 mW/cm
2
Detector Evaluation:
I
L
MIN
@
H (GaAs)
S(GaAs)
TYPE
mA
mW/cm
2
mA/mw/cm
2
L14G1
1
0.5
2
L14G2
0.5
0.5
1
Calculated I
L
@ d
1
is:
L14G1 (S) H
1
= (2) 6.25 = 12.5 mA
L14G2 (S) H
1
= (1) 6.25 = 6.25 mA
Since the system requires an I
L
of 10 mA minimum the correct device to use is the L14G1.
DS300278
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IRED RADIANT INTENSITY SPECIFICATION CONCEPT
1.0"
-50
0
0
1.0
10.0
100.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-25
0
25
50
75
100
125
150
0
5
1N6266
L14G1
Normalized to:
I
F
= 100 mA
V
CE
= 5 V
T
A
= 25C
T
A
- AMBIENT TEMPERATURE (C)
I
CE(ON)
= NORMALIZED COLLECT
OR CURRENT
NORMALIZED I
CE(ON)
Fig. 9 Output vs. Ambient Temperature
IRED/Phototransistor Pair
D - cm
Fig. 10 I
L
vs. Distance
IRED/Phototransistor Pair
D
L14G1
1N6N66
Normalized to:
I
F
= 100 mA
D = 6 cm
Distance measured from seating plane to seating plane
I
F
= 100 mA, DC
I
F
= 1A, Pulsed
10
15
20
25
1N6266
GaAs INFRARED EMITTING DIODE
MAXIMUM RATINGS CURVES
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DS300278
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
1N6266
GaAs INFRARED EMITTING DIODE
DS300278
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