2N3416 / 2N3417
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
2N3416
2N3417
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
50
V
V
CBO
Collector-Base Voltage
50
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N3416 / 2N3417
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
B
C
E
TO-92
1997 Fairchild Semiconductor Corporation
3416-3417, Rev B
2N3416 / 2N3417
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 10 mA, I
B
= 0
50
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
50
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 25 V, I
E
= 0
V
CB
= 18 V, I
E
= 0, T
A
= 100
C
100
15
nA
A
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
100
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 4.5 V, I
C
= 2.0 mA
2N3416
2N3417
75
180
225
540
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 3.0 mA
0.3
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 3.0 mA
0.6
1.3
V
SMALL SIGNAL CHARACTERISTICS
h
fe
Small-Signal Current Gain
I
C
= 2.0 mA, V
CE
= 4.5 V,
f = 1.0 kHz
2N3416
2N3417
75
180
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
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