2N3702
PNP General Purpose Amplifier
2N3702
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
25
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N3702
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
B
C
E
TO-92
1997 Fairchild Semiconductor Corporation
2N3702
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 100
A, I
B
= 0
25
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10 mA, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 20 V, I
E
= 0
100
nA
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
100
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 50 mA
60
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 5.0 mA
0.25
V
V
BE(
on)
Base-Emitter On Voltage
V
CE
= 5.0 V, I
C
= 50 mA
0.6
1.0
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
V
CB
= 10 V, f = 1.0 MHz
12
pF
f
T
Current Gain - Bandwidth Product
I
C
= 50 mA, V
CE
= 5.0 V
100
MHz
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrenchTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
TinyLogicTM
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Formative or
In Design
First Production
Full Production
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