2N3703
Discrete POWER & Signal
Technologies
PNP General Purpose Amplifier
2N3703
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
50
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N3703
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
E
C
B
TO-92
1997 Fairchild Semiconductor Corporation
2N3703
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 10 mA, I
B
= 0
30
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
50
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 20 V, I
E
= 0
100
nA
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
100
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 50 mA
30
150
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 5.0 mA
0.25
V
V
BE(
on
)
Base-Emitter On Voltage
V
CE
= 5.0 V, I
C
= 50 mA
0.6
1.0
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
V
CB
= 10 V, f = 1.0 MHz
12
pF
f
T
Current Gain - Bandwidth Product
I
C
= 50 mA, V
CE
= 5.0 V,
f = 20 MHz
100
MHz
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
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