C
B E
TO-92
C
B
E
B
C
C
SOT-223
E
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
2001 Fairchild Semiconductor
Corporation
Thermal Characteristics
T
A
= 25C unless otherwise noted
Symbol
Characteristic
Max
Units
2N3904
*MMBT3904
**PZT3904
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
1,000
8.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
125
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
2N3904
MMBT3904
SOT-23
Mark: 1A
PZT3904
2N3904 / MMBT3904 / PZT3904
2N3904/MMBT3904/PZT3904, Rev A
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
BL
Base Cutoff Current
V
CE
= 30 V, V
EB
= 3V
50
nA
I
CEX
Collector Cutoff Current
V
CE
= 30 V, V
EB
= 3V
50
nA
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
Spice Model
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
300
MHz
C
obo
Output Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 1.0 MHz
4.0
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0,
f = 1.0 MHz
8.0
pF
NF
Noise Figure
I
C
= 100
A, V
CE
= 5.0 V,
R
S
=1.0k
,f=10 Hz to 15.7kHz
5.0
dB
t
d
Delay Time
V
CC
= 3.0 V, V
BE
= 0.5 V,
35
ns
t
r
Rise Time
I
C
= 10 mA, I
B1
= 1.0 mA
35
ns
t
s
Storage Time
V
CC
= 3.0 V, I
C
= 10mA
200
ns
t
f
Fall Time
I
B1
= I
B2
= 1.0 mA
50
ns
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
40
70
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.2
0.3
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65
0.85
0.95
V
V
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
2N3904 / MMBT3904 / PZT3904
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EMI
TTER
ON
VOL
T
A
G
E (
V
)
BE
(
O
N)
C
V = 5V
CE
25 C
125 C
- 40 C
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
ITT
E
R VOL
T
A
G
E
(
V
)
BESA
T
C
= 10
25 C
125 C
- 40 C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V
-
CO
LL
EC
T
O
R-
E
M
I
TTE
R
VO
L
T
A
G
E
(
V
)
CESA
T
25 C
C
= 10
125 C
- 40 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
LL
ECT
O
R C
URR
ENT
(
n
A
)
A
V
= 30V
CB
CB
O
Capacitance vs
Reverse Bias Voltage
0.1
1
10
100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CA
P
A
CIT
A
NCE (p
F
)
C obo
C ibo
f = 1.0 MHz
Typical Pulsed Current Gain
vs Collector Current
0.1
1
10
100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TY
P
I
C
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
I
N
FE
- 40 C
25 C
C
V = 5V
CE
125 C
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
- PO
W
E
R DI
SSI
P
A
TIO
N
(
W
)
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics
(continued)
Noise Figure vs Frequency
0.1
1
10
100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
N
F
-
NOI
S
E FI
G
URE (
d
B)
V = 5.0V
CE
I = 100
A, R = 500
C
S
I = 1.0 mA
R = 200
C
S
I = 50
A
R = 1.0 k
C
S
I = 0.5 mA
R = 200
C
S
k
Noise Figure vs Source Resistance
0.1
1
10
100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
I = 100
A
C
I = 1.0 mA
C
S
I = 50
A
C
I = 5.0 mA
C
-
DEGR
EES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1
10
100
1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h
-
CURRE
NT GA
I
N
(
d
B)
V = 40V
CE
I = 10 mA
C
h
fe
fe
Turn-On Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
S)
I = I =
B1
C
B2
I
c
10
40V
15V
2.0V
t
@
V = 0V
CB
d
t
@
V = 3.0V
CC
r
Rise Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
R
I
S
E
T
I
M
E
(
n
s
)
I = I =
B1
C
B2
I
c
10
T = 125C
T = 25C
J
V = 40V
CC
r
J
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Storage Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
S
T
O
R
A
G
E
T
I
M
E
(n
s
)
I = I =
B1
C
B2
I
c
10
S
T = 125C
T = 25C
J
J
Fall Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
F
A
L
L
T
I
M
E
(n
s
)
I = I =
B1
C
B2
I
c
10
V = 40V
CC
f
T = 125C
T = 25C
J
J
Current Gain
0.1
1
10
10
100
500
I - COLLECTOR CURRENT (mA)
h
-
CUR
R
E
NT
GA
IN
V = 10 V
CE
C
fe
f = 1.0 kHz
T = 25 C
A
o
Output Admittance
0.1
1
10
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
O
U
TPU
T
A
D
M
I
T
T
A
N
C
E
(
m
h
os
)
V = 10 V
CE
C
oe
f = 1.0 kHz
T = 25 C
A
o
Input Impedance
0.1
1
10
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
I
N
PU
T
I
M
PED
AN
C
E
(
k
)
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A
o
Voltage Feedback Ratio
0.1
1
10
1
2
3
4
5
7
10
I - COLLECTOR CURRENT (mA)
h
-
V
O
LTA
G
E
F
E
E
D
B
A
C
K
R
A
T
I
O
(
x
1
0
)
V = 10 V
CE
C
re
f = 1.0 kHz
T = 25 C
A
o
_
4
Test Circuits
10 K
3.0 V
275
t
1
C
1
<
<
<
<
<
4.0 pF
Duty Cycle
=
=
=
=
=
2%
Duty Cycle
=
=
=
=
=
2%
<
<
<
<
<
1.0 ns
- 0.5 V
300 ns
10.6 V
10
<
<
<
<
<
t
1
<
<
<
<
<
500
s
10.9 V
- 9.1 V
<
<
<
<
<
1.0 ns
0
0
10 K
3.0 V
275
C
1
<
<
<
<
<
4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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