2N3905
PNP General Purpose Amplifier
2N3905
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N3905
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
C
B
E
TO-92
2N3905, Rev A
2001 Fairchild Semiconductor Corporation
2N3905
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
CEX
Collector Cutoff Current
V
CE
= 30 V, V
OB
= 3.0 V
50
nA
I
BL
Base Cutoff Current
V
CE
= 30 V, V
OB
= 3.0 V
50
nA
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 0.1 mA
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 1.0 V, I
C
= 50 mA
V
CE
= 1.0 V, I
C
= 100 mA
30
40
50
30
15
150
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.25
0.40
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65
0.85
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
V
CB
= 5.0 V, f = 1.0 MHz
4.5
pF
C
ib
Input Capacitance
V
EB
= 0.5 V, f = 1.0 MHz
10
pF
h
fe
Small-Signal Current Gain
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
2.0
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
=10 V,
50
200
h
re
Voltage Feedback Ratio
f = 1.0 KHz
0.1
5.0
x10
-4
h
ie
Input Impedance
0.5
8.0
k
h
oe
Output Impedance
1.0
40
mhos
NF
Noise Figure
V
CE
= 5.0 V, I
C
= 100
A,
R
S
= 1.0 k
,
B
W
= 10 Hz to 15.7 KHz
5.0
dB
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
t
d
Delay Time
V
CC
= 3.0 V, I
CS
= 10 mA,
35
ns
t
r
Rise Time
I
B1
= 1.0 mA ,V
OB
( off )
= 3.0 V
35
ns
t
s
Storage Time
V
CC
= 3.0 V, I
CS
= 10 mA,
200
ns
t
f
Fall Time
I
B1
= I
B2
= 1.0 mA
60
ns
ON CHARACTERISTICS*
2N390
5
Typical Characteristics
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
0.1
1
10
0
2
4
6
8
10
REVERSE BIAS VOLTAGE (V)
CA
P
A
CI
T
A
NCE (
p
F
)
C obo
C ibo
PNP General Purpose Amplifier
(continued)
Ty pical Pulsed Current Gain
v s Collector Current
0.1
0.2
0.5
1
2
5
10
20
50
100
50
100
150
200
250
I - COLLECTOR CURRE NT (mA)
h
-
T
YPI
C
A
L
P
U
L
SED
C
U
R
R
EN
T
G
A
I
N
C
FE
125 C
25 C
- 40 C
V = 1 .0V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRE NT (mA)
V
-
C
O
L
L
E
C
T
O
R
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
CE
S
A
T
25 C
- 40 C
125C
= 10
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
BE
S
A
T
= 10
25 C
- 40 C
125 C
Base Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
(
O
N
)
V = 1V
CE
25 C
- 40 C
125 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
CU
RR
E
N
T
(
n
A)
A
CBO
V = 25V
CB
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
PO
W
E
R
D
I
SSI
P
A
TI
O
N
(
W
)
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics
(continued)
Noise Figure vs Frequency
0.1
1
10
100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF
-
NO
I
S
E
F
I
G
U
R
E
(
d
B)
I = 100
A, R = 200
C
V = 5.0V
CE
S
I = 100
A, R = 2.0 k
C
S
I = 1.0 mA, R = 200
C
S
Noise Figure vs Source Resistance
0.1
1
10
100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
k
I = 100
A
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Times
vs Collector Current
1
10
100
1
10
100
500
I - COLLECTOR CURRENT (mA)
T
I
ME
(n
S
)
I = I =
t r
t
s
B1
C
B2
I
c
10
t f
t d
Turn On and Turn Off Times
vs Collector Current
1
10
100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
S
)
I = I =
t
off
B1
B2
I
c
10
t
on
V = 0.5V
BE(OFF)
t
I =
on
t
off
B1
I
c
10
2N390
5
PNP General Purpose Amplifier
(continued)
2N390
5
Typical Characteristics
(continued)
PNP General Purpose Amplifier
(continued)
Input Impedance
0.1
1
10
0.1
1
10
I - COLLECTOR CURRENT (mA)
h
-
I
N
PU
T I
M
PED
ANC
E
(
k
)
V = 10 V
CE
C
ie
f = 1.0 kHz
Output Admittance
0.1
1
10
10
100
1000
I - COLLECTOR CURRENT (mA)
h
-
O
U
TPU
T
A
D
M
I
T
T
A
N
C
E
(
m
h
os
)
V = 10 V
CE
C
oe
f = 1.0 kHz
Current Gain
0.1
1
10
10
20
50
100
200
500
1000
I - COLLECTOR CURRENT (mA)
h
-
C
U
R
R
E
N
T G
A
I
N
V = 10 V
CE
C
fe
f = 1.0 kHz
Voltage Feedback Ratio
0.1
1
10
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
V
O
L
T
A
G
E
F
E
E
D
B
A
C
K
R
A
T
IO
(
x
1
0
)
C
re
_
4
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