2N4124
MMBT4124
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
25
V
V
CBO
Collector-Base Voltage
30
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N4124
*MMBT4124
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
C
B E
TO-92
C
B
E
SOT-23
Mark: ZC
2001 Fairchild Semiconductor
Corporation
2N4124 / MMBT4124
2N4124/MMBT4124, Rev A
2N4124 / MMBT4124
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS*
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
25
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
30
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
C
= 10
A, I
C
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 20 V, I
E
= 0
50
nA
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
50
nA
h
FE
DC Current Gain
I
C
= 2.0 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
120
60
360
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 5.0 mA
0.3
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 5.0 mA
0.95
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
300
MHz
C
obo
Output Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 100 kHz
4.0
pF
C
ibo
Input Capacitance
V
BE
= 0.5 V, I
C
= 0,
f = 1.0 kHz
8.0
pF
C
cb
Collector-Base Capcitance
V
CB
= 5.0 V, I
E
= 0,
f = 100 kHz
4.0
pF
h
fe
Small-Signal Current Gain
V
CE
= 10 V, I
C
= 2.0 mA,
f = 1.0 kHz
120
480
NF
Noise Figure
I
C
= 100
A, V
CE
= 5.0 V,
R
S
=1.0k
, f=10 Hz to 15.7 kHz
5.0
dB
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
NPN General Purpose Amplifier
(continued)
2N
412
4
/ MMBT
4124
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EMI
TTER
ON
VOL
T
A
G
E (
V
)
BE
(
O
N)
C
V = 5V
CE
25 C
125 C
- 40 C
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
ITT
E
R VOL
T
A
G
E
(
V
)
BESA
T
C
= 10
25 C
125 C
- 40 C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V
-
CO
LL
EC
T
O
R-
E
M
I
TTE
R
VO
L
T
A
G
E
(
V
)
CESA
T
25 C
C
= 10
125 C
- 40 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
LL
ECT
O
R C
URR
ENT
(
n
A
)
A
V
= 30V
CB
CB
O
Capacitance vs
Reverse Bias Voltage
0.1
1
10
100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CA
P
A
CIT
A
NCE (p
F
)
C obo
C ibo
f = 1.0 MHz
Typical Pulsed Current Gain
vs Collector Current
0.1
1
10
100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TY
P
I
C
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
I
N
FE
- 40 C
25 C
C
V = 5V
CE
125 C
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
- PO
W
E
R DI
SSI
P
A
TIO
N
(
W
)
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics
(continued)
Noise Figure vs Frequency
0.1
1
10
100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
N
F
-
NOI
S
E FI
G
URE (
d
B)
V = 5.0V
CE
I = 100
A, R = 500
C
S
I = 1.0 mA
R = 200
C
S
I = 50
A
R = 1.0 k
C
S
I = 0.5 mA
R = 200
C
S
k
Noise Figure vs Source Resistance
0.1
1
10
100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
I = 100
A
C
I = 1.0 mA
C
S
I = 50
A
C
I = 5.0 mA
C
-
DEGR
EES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1
10
100
1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h
-
CURRE
NT GA
I
N
(
d
B)
V = 40V
CE
I = 10 mA
C
h
fe
fe
Turn-On Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
S)
I = I =
B1
C
B2
I
c
10
40V
15V
2.0V
t
@
V = 0V
CB
d
t
@
V = 3.0V
CC
r
Rise Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
R
I
S
E
T
I
M
E
(
n
s
)
I = I =
B1
C
B2
I
c
10
T = 125C
T = 25C
J
V = 40V
CC
r
J
2N
4124
/ MMBT
4124
NPN General Purpose Amplifier
(continued)
2N
4124
/ MMBT
4124
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Storage Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
S
T
O
R
A
G
E
T
I
M
E
(n
s
)
I = I =
B1
C
B2
I
c
10
S
T = 125C
T = 25C
J
J
Fall Time vs Collector Current
1
10
100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t
-
F
A
L
L
T
I
M
E
(n
s
)
I = I =
B1
C
B2
I
c
10
V = 40V
CC
f
T = 125C
T = 25C
J
J
Current Gain
0.1
1
10
10
100
500
I - COLLECTOR CURRENT (mA)
h
-
CUR
R
E
NT
GA
IN
V = 10 V
CE
C
fe
f = 1.0 kHz
T = 25 C
A
o
Output Admittance
0.1
1
10
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
O
U
TPU
T
A
D
M
I
T
T
A
N
C
E
(
m
h
os
)
V = 10 V
CE
C
oe
f = 1.0 kHz
T = 25 C
A
o
Input Impedance
0.1
1
10
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
I
N
PU
T
I
M
PED
AN
C
E
(
k
)
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A
o
Voltage Feedback Ratio
0.1
1
10
1
2
3
4
5
7
10
I - COLLECTOR CURRENT (mA)
h
-
V
O
LTA
G
E
F
E
E
D
B
A
C
K
R
A
T
I
O
(
x
1
0
)
V = 10 V
CE
C
re
f = 1.0 kHz
T = 25 C
A
o
_
4
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