2N4125
Discrete POWER & Signal
Technologies
PNP General Purpose Amplifier
2N4125
This device is designed for use as general purpose amplifiers
and switches requiring collector currents of 10
A to 100 mA.
Sourced from Process 66. See 3906 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
30
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N4125
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
2N4125
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 1.0 mA, I
B
= 0
30
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
30
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
4.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 20 V, I
E
= 0
50
nA
I
EBO
Emitter-Cutoff Current
V
EB
= 3.0 V, I
C
= 0
50
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 2.0 mA
V
CE
= 1.0 V, I
C
= 50 mA
50
25
150
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 5.0 mA
0.4
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 5.0 mA
0.95
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
V
CB
= 5.0 V, f = 100 kHz
4.5
pF
C
ib
Input Capacitance
V
BE
= 0.5 V, f = 100 kHz
10
pF
h
fe
Small-Signal Current Gain
I
C
= 2.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
50
2.0
200
NF
Noise Figure
V
CE
= 5.0 V, I
C
= 100
A,
R
S
= 1.0 k
,
f = 10Hz to 15.7 kHz,
5.0
dB
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
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