2N4400 / MMBT4400
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 19. See PN2222A for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
1.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N4400
*MMBT4400
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
C
B
E
SOT-23
Mark: 83
MMBT4400
2N4400
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
6.0
V
I
CEX
Collector Cutoff Current
V
CE
= 35 V, V
EB
= 0.4 V
0.1
A
I
BL
Emitter Cutoff Current
V
CE
= 35 V, V
EB
= 0.4 V
0.1
A
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 1.0 V, I
C
= 150 mA
V
CE
= 2.0 V, I
C
= 500 mA
20
40
50
20
150
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
=15 mA
I
C
= 500 mA, I
B
= 50 mA
0.40
0.75
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
=15 mA
I
C
= 500 mA, I
B
= 50 mA
0.75
0.95
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
V
CB
= 5.0 V, f = 140 kHz
6.5
pF
C
ib
Input Capacitance
V
EB
= 0.5 V, f = 140 kHz
30
pF
h
fe
Small-Signal Current Gain
I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
2.0
h
fe
Small-Signal Current Gain
V
CE
= 10 V, I
C
= 1.0 mA,
20
250
h
ie
Input Impedance
f = 1.0 kHz
0.5
7.5
K
h
re
Voltage Feedback Ratio
0.1
8.0
x 10
-4
h
oe
Output Admittance
1.0
30
mhos
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
t
d
Delay Time
V
CC
= 30 V, I
C
= 150 mA,
15
ns
t
r
Rise Time
I
B1
= 15 mA ,V
BE ( off )
= 0.0 V
20
ns
t
s
Storage Time
V
CC
= 30 V, I
C
= 150 mA
225
ns
t
f
Fall Time
I
B1
= I
B2
= 15 mA
30
ns
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