2N4403 / MMBT4403
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
4
0
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
600
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N4403
C
B
E
TO-92
MMBT4403
C
B
E
SOT-23
Mark: 2T
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4403
*MMBT4403
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation 2N4403/MMBT4403, Rev. C
2N4403 / MMBT4403
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
t
d
Delay Time
V
CC
= 30 V, I
C
= 150 mA,
15
ns
t
r
Rise Time
I
B1
= 15 mA
20
ns
t
s
Storage Time
V
CC
= 30 V, I
C
= 150 mA
225
ns
t
f
Fall Time
I
B1
= I
B2
= 15 mA
30
ns
*
Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 0.1 mA, I
E
= 0
4
0
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 0.1 A, I
C
= 0
5.0
V
I
BEX
Base Cutoff Current
V
CE
= 35 V, V
EB
= 0.4 V
0.1
A
I
CEX
Collector Cutoff Current
V
CE
= 35 V, V
BE
= 0.4 V
0.1
A
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 2.0 V*
I
C
= 500 mA, V
CE
= 2.0 V*
30
60
100
100
20
300
V
CE(
sat
)
Collector-Emitter Saturation
Voltage*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.4
0.75
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA*
I
C
= 500 mA, I
B
= 50 mA
0.75
0.95
1.3
V
V
PNP General Purpose Amplifier
(continued)
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
200
MHz
C
cb
Collector-Base Capacitance
V
CB
= 10 V, I
E
= 0,
f = 140 kHz
8.5
pF
C
eb
Emitter-Base Capacitance
V
BE
= 0.5 V, I
C
= 0,
f = 140 kHz
30
pF
h
ie
Input Impedance
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.5
15
k
h
re
Voltage Feedback Ratio
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
0.1
8.0
x 10
-4
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
60
500
h
oe
Output Admittance
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.0
100
mhos
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
YPI
CA
L
PU
LSED C
URR
ENT
G
A
I
N
C
FE
125 C
25 C
- 40 C
V = 5V
CE
Input and Output Capacitance
vs Reverse Bias Voltage
0.1
1
10
50
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
C
A
P
A
CI
T
A
NC
E
(
p
F
)
C ob
C
ib
Collect or-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
n
A
)
A
CBO
V = 35V
CB
Collector-Emitter Saturation
Voltage vs Collect or Current
1
10
100
500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRE NT (mA)
V
-
C
O
LL
E
C
TO
R
E
M
I
T
T
E
R
V
O
LT
A
G
E
(
V
)
C
CE
S
A
T
= 10
25 C
- 40
C
125
C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
V
O
L
T
A
G
E
(
V
)
C
BE
S
A
T
25 C
- 40
C
125
C
= 10
Base Emitter ON Voltage vs
Collect or Current
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
(
O
N)
V = 5V
CE
25 C
- 40
C
125C
PNP General Purpose Amplifier
(continued)
2N4403 / MMBT4403
Typical Characteristics
(continued)
Switching Times
vs Collector Current
10
100
1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
S
)
I = I =
t r
t
s
B1
C
B2
I
c
10
V = 15 V
cc
t f
t d
Turn On and Turn Off Times
vs Collector Current
10
100
1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
S
)
I = I =
t on
t
off
B1
C
B2
I
c
10
V = 15 V
cc
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R D
I
SS
I
P
A
T
I
O
N (
W
)
D
o
SOT-223
TO-92
SOT-23
Rise Time vs Collector
and Turn On Base Currents
10
100
500
1
2
5
10
20
50
I - COLLECTOR CURRENT (mA)
I
-
TU
RN 0
N
BA
S
E
CU
RR
ENT
(
m
A
)
30 ns
C
t = 15 V
r
B1
60 ns
PNP General Purpose Amplifier
(continued)
2N4403 / MMBT4403
Typical Common Emitter Characteristics
(f = 1.0kHz)
Common Emitter Characteristics
1
2
5
10
20
50
0.1
0.2
0.5
1
2
5
I - COLLECTOR CURRENT (mA)
CH
AR
.
RE
L
A
T
I
VE
T
O
V
A
L
U
E
S
AT I
=
-
1
0
m
A
V = -10 V
CE
C
C
T = 25 C
A
o
h
oe
h
re
h
fe
h
ie
_ _
_ _ _
_
Common Emitter Characteristics
-20
-16
-12
-8
-4
0.8
0.9
1
1.1
1.2
1.3
V - COLLECTOR VOLTAGE (V)
C
H
AR
.
REL
A
T
I
VE
T
O
V
A
L
U
ES
A
T
V
=
-
1
0
V
I = -10mA
C
CE
CE
T = 25 C
A
o
h
oe
h and h
re
h
fe
h
ie
oe
h
fe
h
ie
h
re
Common Emitter Characteristics
-40
-20
0
20
40
60
80
100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - AMBIENT TEMPERATURE ( C)
C
H
A
R
.
R
E
LA
TI
V
E
TO
V
A
LU
ES
A
T
T
=
25
C
V = -10 V
CE
A
A
h
oe
h
re
h
fe
h
ie
o
o
I = -10mA
C
h
fe
h
ie
h
re
h
oe
PNP General Purpose Amplifier
(continued)
2N4403 / MMBT4403
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