2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2N50
86/
2N
5
087/
MM
BT508
7
Absolute Maximum Ratings*
T
a
=25
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
C unless otherwise noted
* Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
-50
V
V
CBO
Collector-Base Voltage
-50
V
V
EBO
Emitter-Base Voltage
-3.0
V
I
C
Collector current
- Continuous
-100
mA
T
J
, T
stg
Junction and Storage Temperature
-55 ~ +150
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
I
C
= -1.0mA, I
B
= 0
-50
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -100
A, I
E
= 0
-50
V
I
CEO
Collector Cutoff Current
V
CB
= -10V, I
E
= 0
V
CB
= -35V, I
E
= 0
-10
-50
nA
nA
I
CBO
Emitter Cutoff Current
V
EB
= -3.0V, I
C
= 0
-50
nA
On Characteristics
h
FE
DC Current Gain
I
C
= -100
A, V
CE
= -5.0V
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
500
800
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -1.0mA
-0.3
V
V
BE(on)
Base-Emitter On Voltage
I
C
= -1.0mA, V
CE
= -5.0V
-0.85
V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
I
C
= -500
A, V
CE
= -5.0V, f = 20MHz
40
MHz
C
cb
Collector-Base Capacitance
V
CB
= -5.0V, I
E
= 0, f = 100KHz
4.0
pF
h
fe
Small-Signal Current Gain
I
C
= -1.0mA, V
CE
= -5.0V,
f = 1.0KHz
5086
5087
150
250
600
900
NF
Noise Figure
I
C
= -100
A, V
CE
= -5.0V
R
S
= 3.0k
, f = 1.0KHz
I
C
= -20
A, V
CE
= -5.0V
R
S
= 10k
f = 10Hz to 15.7KHz
5086
5087
5086
5087
3.0
2.0
3.0
2.0
dB
dB
dB
dB
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 2Q
TO-92
1
1. Emitter 2. Base 3. Collector
2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2N50
86/
2N
5
087/
MM
BT508
7
Thermal Characteristics
T
a
=25
C unless otherwise noted
* Device mounted on FR-4 PCB 1.6"
1.6"
0.06."
Symbol
Parameter
Max.
Units
2N5086
2N5087
*MMBT5087
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2N50
86/
2N
5
087/
MM
BT508
7
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Voltag
0.01
0.03
0.1
0.3
1
3
10
30
100
50
100
150
200
250
300
350
I - COLLECTOR CURRENT (mA)
h
-
TY
P
I
C
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
I
N
C
FE
125 C
25 C
- 40 C
V = 5V
CB
0.1
1
10
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRE NT (mA)
V
-
C
O
L
L
E
C
T
O
R
EM
I
T
T
E
R
VO
L
T
A
G
E (
V
)
C
CE
S
A
T
= 10
25 C
- 40 C
125 C
0.1
1
10
50
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
SE EM
I
T
T
E
R
VO
L
T
A
G
E (
V
)
C
BE
S
A
T
25 C
- 40 C
125 C
= 10
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
O
N
V = 5V
CE
25 C
- 40 C
125 C
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
n
A
)
A
CB
O
V = 40V
CB
0
4
8
12
16
20
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAP
AC
I
T
AN
CE (
p
F
)
f = 1 MHz
C obo
C ibo
2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2N50
86/
2N
5
087/
MM
BT508
7
Typical Characteristics
(Continuce)
Figure 7. Gain Bandwidth Product
vs Collector Current
Figure 8. Noise Figure vs Frequency
Figure 9. Wideband Noise Frequency
vs Source Resistance
Figure 10. Power Dissipation vs
Ambient Temperature
Figure 11. Equivalent Input Noise Current
vs Collector Current
Figure 12. Equivalent Input Noise Voltage
vs Collector Current
0.1
1
10
100
0
50
100
150
200
250
300
350
I - COLLECTOR CURRENT (mA)
f
-
G
A
I
N
BA
N
D
W
I
DT
H
PR
OD
UC
T
(
M
H
z
)
V = 5V
CE
C
T
100
1000
10000
1000000
0
1
2
3
4
5
f - FREQUENCY (Hz)
N
F
-
N
O
IS
E
F
I
G
U
R
E
(d
B
)
V = 5V
CE
I = - 250
A, R = 5.0 k
C
S
I = - 500
A, R = 1.0 k
C
S
I = - 20
A, R = 10 k
C
S
1,000
2,000
5,000
10,000
20,000
50,000
100,000
0
2
4
6
8
R - SOURCE RESISTANCE ( )
N
F
-
NO
I
S
E
F
I
GU
RE
(
d
B)
V = 5V
BANDWIDTH = 15.7 kHz
CE
I = 10
A
C
I = 100
A
C
S
0
25
50
75
100
125
150
0
125
250
375
500
625
TEMPERATURE ( C)
P
-
PO
W
E
R
D
I
SS
I
P
A
T
I
O
N
(
m
W
)
D
o
TO-92
SOT-23
0.001
0.01
0.1
1
0.1
0.2
0.5
1
2
5
10
I - COLLECTOR CURRENT (mA)
i
-
E
Q
UI
V
A
L
E
NT
I
N
P
U
T
NO
I
S
E
C
U
R
R
E
N
T
(
p
A
/
Hz
)
V = - 5.0V
CE
i
, f =
10
0 Hz
n
C
n
2
i ,
f =
1.0
kH
z
n
i
, f =
10
kH
z
n
0.001
0.01
0.1
1
0.001
0.002
0.005
0.01
0.02
0.05
0.1
I - COLLECTOR CURRENT (mA)
e
-
E
Q
UI
V
A
L
E
NT
I
N
P
U
T
NO
I
S
E
V
O
L
T
AG
E
(
V
/
Hz
)
V = - 5.0V
CE
C
e , f = 100 Hz
n
e , f = 1.0 kHz
n
e , f = 10 kHz
n
n
2
2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2N50
86/
2N
5
087/
MM
BT508
7
Typical Characteristics
(Continuce)
Figure 13. Contours of Constanct
Narrow Band Noise Figure
Figure 14. Contours of Constanct
Narrow Band Noise Figure
Figure 15. BContours of Constant
Narrow Band Noise Figure
Figure 16. Contours of Constant
Narrow Band Noisd Figure
0.001
0.01
0.1
1
100
1,000
10,000
100,000
1,000,000
I - COLLECTOR CURRENT (mA)
R
-
S
O
U
R
C
E
R
ESI
ST
ANC
E
(
)
BANDWIDTH = 1.5 kHz
10
dB
C
S
6.0 d
B
4.0 d
B
10
dB
6.0 d
B
4.0 d
B
2.0 d
B
V = - 5V
f = 10 kHz
CE
1.0 d
B
0.001
0.01
0.1
1
100
1,000
10,000
100,000
1,000,000
I - COLLECTOR CURRENT (mA)
R
-
SO
U
R
C
E
R
ESI
ST
ANC
E
(
)
12
dB
C
S
8.0 d
B
5.0 d
B
3.0 d
B
V = - 5V
f = 100 Hz
BANDWIDTH = 15 Hz
CE
12
dB
8.0 d
B
5.0 d
B
0.001
0.01
0.1
1
100
1,000
10,000
100,000
1,000,000
I - COLLECTOR CURRENT (mA)
R
-
SO
U
R
C
E
R
E
SI
S
T
A
N
C
E (
)
10
dB
C
S
6.0 d
B
4.0 d
B
V = - 5V
f = 1.0 kHz
BANDWIDTH = 150 Hz
CE
10
dB
6.0 d
B
4.0 d
B
0.01
0.1
1
10
100
200
500
1,000
2,000
5,000
10,000
I - COLLECTOR CURRENT (mA)
R
-
SO
U
R
C
E
R
ESI
S
T
ANC
E
(
)
C
S
6.
0 d
B
4.
0 d
B
V = - 5V
f = 10 MHz
BANDWIDTH
= - 2 kHz
CE
6.
0 d
B
4.
0 d
B
2.
0 d
B
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