2N5088 / MMBT5088 / 2N5089 / MMBT5089
2N5088
2N5089
MMBT5088
MMBT5089
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1
A to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
2N5088
2N5089
30
25
V
V
V
CBO
Collector-Base Voltage
2N5088
2N5089
35
30
V
V
V
EBO
Emitter-Base Voltage
4.5
V
I
C
Collector Current - Continuous
100
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5088
2N5089
*MMBT5088
*MMBT5089
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1Q / 1R
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
2N5088 / MMBT5088 / 2N5089 / MMBT5089
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
A, V
CE
= 5.0 V 2N5088
2N5089
I
C
= 1.0 mA, V
CE
= 5.0 V 2N5088
2N5089
I
C
= 10 mA, V
CE
= 5.0 V* 2N5088
2N5089
300
400
350
450
300
400
900
1200
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 10 mA, V
CE
= 5.0 V
0.8
V
SMALL SIGNAL CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
2N5088
2N5089
30
25
V
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
2N5088
2N5089
35
30
V
V
I
CBO
Collector Cutoff Current
V
CB
= 20 V, I
E
= 0
2N5088
V
CB
= 15 V, I
E
= 0
2N5089
50
50
nA
nA
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
V
EB
= 4.5 V, I
C
= 0
50
100
nA
nA
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271
Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n
Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10)
f
T
Current Gain - Bandwidth Product
I
C
= 500
A,V
CE
= 5.0 mA,
f = 20 MHz
50
MHz
C
cb
Collector-Base Capacitance
V
CB
= 5.0 V, I
E
= 0, f = 100 kHz
4.0
pF
C
eb
Emitter-Base Capacitance
V
BE
= 0.5 V, I
C
= 0, f = 100 kHz
10
pF
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V, 2N5088
f = 1.0 kHz
2N5089
350
450
1400
1800
NF
Noise Figure
I
C
= 100
A, V
CE
= 5.0 V, 2N5088
R
S
= 10 k
,
2N5089
f = 10 Hz to 15.7 kHz
3.0
2.0
dB
dB
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
NPN General Purpose Amplifier
(continued)
2N5088 / MMBT5088 / 2N5089 / MMBT5089
DC Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
P 0
0.1
1
10
100
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
C
CE
S
A
T
25 C
- 40 C
125 C
= 10
Base-Emitter Saturation
Voltage vs Collector Current
P 0
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
C
BE
S
A
T
= 10
25 C
- 40 C
125 C
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
40
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
M
I
T
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
C
BE
O
N
V = 5V
CE
25 C
- 40 C
125 C
Collector-Cutoff Current
vs Ambient Temperature
P 0
25
50
75
100
125
150
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I
-
CO
L
L
E
C
T
O
R
CU
RRE
N
T
(n
A
)
A
CB
O
V = 45V
CB
Typical Pulsed Current Gain
vs Collector Current
P 07
0.01 0.03
0.1
0.3
1
3
10
30
100
0
50
100
150
200
250
300
350
400
I - COLLECTOR CURRENT (mA)
h
-
T
Y
P
I
CAL
P
U
L
S
E
D
CUR
RE
NT
G
A
I
N
C
FE
125 C
25 C
- 40 C
Vce=5V
NPN General Purpose Amplifier
(continued)
2N5088 / MMBT5088 / 2N5089 / MMBT5089
AC Typical Characteristics
Input / Output Capacitance
vs. Reverse Bias Voltage
Contours of Constant Gain
Bandwidth Product (f
T
)
Wideband Noise Figure
vs. Source Resistance
Contours of Constant
Narrow Band Noise Figure
Noise Figure vs. Frequency
Normalized Collector Cutoff
Current vs. Ambient Temperature
NPN General Purpose Amplifier
(continued)
2N5088 / MMBT5088 / 2N5089 / MMBT5089
NPN General Purpose Amplifier
(continued)
AC Typical Characteristics
(continued)
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
Maximum Power Dissipation
vs. Ambient Temperature
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