2N5306
Discrete POWER & Signal
Technologies
NPN Darlington Transistor
2N5306
This device is designed for applications requiring extremely
high current gain at currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
25
V
V
CBO
Collector-Base Voltage
25
V
V
EBO
Emitter-Base Voltage
12
V
I
C
Collector Current - Continuous
1.2
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N5306
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
2N5306
NPN Darlington Transistor
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
=10 mA, I
B
= 0
25
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 0.1
A, I
E
= 0
25
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 0.1
A, I
C
= 0
12
V
I
CBO
Collector Cutoff Current
V
CB
= 25 V, I
E
= 0
V
CB
= 25 V, I
E
= 0, T
A
= 100
C
0.1
20
A
A
I
EBO
Emitter Cutoff Current
V
EB
= 12 V, I
C
= 0
0.1
A
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 2.0 mA
V
CE
= 5.0 V, I
C
= 100 mA
7,000
20,000
70,000
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 200 mA, I
B
= 0.2 mA
1.4
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 200 mA, I
B
= 0.2 mA
1.6
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 200 mA, V
CE
= 5.0 V
1.5
V
SMALL SIGNAL CHARACTERISTICS
C
cb
Collector-Base Capacitance
V
CB
= 10 V, f = 1.0 MHz
10
pF
h
fe
Small-Signal Current Gain
I
C
=2.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
C
=2.0 mA, V
CE
= 5.0 V,
f = 10 MHz
7,000
6.0
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
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