2N5400
Discrete POWER & Signal
Technologies
PNP General Purpose Amplifier
2N5400
This device is designed for use as general purpose amplifiers
and switches requiring high voltages. Sourced from Process
74. See 2N5401 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
120
V
V
CBO
Collector-Base Voltage
130
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
2N5400
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
2N5400
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
B
= 0
120
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
130
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 100 V, I
E
= 0
V
CB
= 100 V, I
E
= 0, T
A
= 100
C
100
100
nA
A
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
50
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 1.0 mA
V
CE
= 5.0 V, I
C
= 10 mA
V
CE
= 5.0 V, I
C
= 50 mA
30
40
40
180
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.2
0.5
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
1.0
1.0
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
V
CB
= 10 V, f = 1.0 MHz
6.0
pF
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
100
400
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
30
200
NF
Noise Figure
V
CE
= 5.0 V, I
C
= 250
A,
R
S
= 1.0 k
,
f = 10 Hz to 15.7 kHz
8.0
V
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
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