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Электронный компонент: 2N5551

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2N5551 / MMBT5551
2N5551
MMBT5551
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers
and gas discharge display driving. Sourced from Process 16.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
160
V
V
CBO
Collector-Base Voltage
180
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
600
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5551
*MMBT5551
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: 3S
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2000 Fairchild Semiconductor International
2N5551/MMBT5551 Rev A
2N5551 / MMBT5551
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
SMALL SIGNAL CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Sustaining Voltage*
I
C
= 1.0 mA, I
B
= 0
160
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
180
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
CBO
Collector Cutoff Current
V
CB
= 120 V, I
E
= 0,
V
CB
= 120 V, I
E
= 0, T
A
= 100
C
50
50
nA
A
I
EBO
Emitter Cutoff Current
V
EB
= 4.0 V, I
C
= 0
50
nA
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 50 mA, V
CE
= 5.0 V
80
80
30
250
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.15
0.20
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
1.0
1.0
V
V
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
100
300
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0,
f = 1.0 MHz
6.0
pF
C
ibo
Input Capacitance
V
BE
= 0.5 V, I
C
= 0,
f = 1.0 MHz
20
pF
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
50
250
NF
Noise Figure
I
C
= 250
A, V
CE
= 5.0 V,
R
S
=1.0 k
, f=10 Hz to 15.7 kHz
8.0
dB
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p
Itf=50m Vtf=5 Xtf=8 Rb=10)
NPN General Purpose Amplifier
(continued)
2N5551 / MMBT5551
Typical Characteristics
NPN General Purpose Amplifier
(continued)
Collector-Emitter Saturation
Voltage vs Collector Current
P 16
1
10
100
200
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
L
E
C
T
O
R

E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
C
C
ESA
T
25 C
- 40 C
125 C
= 10
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
SE E
M
I
T
TE
R VO
L
T
A
G
E
(
V
)
C
B
ESA
T
= 10
25 C
- 40 C
125 C
Typical Pulsed Current Gain
vs Collector Current
0.1
0.2
0.5
1
2
5
10
20
50
100
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h
- TYP
I
C
A
L PU
LSE
D
C
U
R
R
E
N
T
G
A
IN
C
FE
125 C
25 C
- 40 C
Vce = 5V
Base Emitter ON Voltage vs
Collector Current
0.1
1
10
100 200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE EM
I
T
T
E
R

O
N
VOL
T
A
G
E (
V
)
C
BE
O
N
V = 5V
CE
25 C
- 40 C
125 C
Collector-Cutoff Current
vs. Ambient Temperature
P
25
50
75
100
125
1
10
50
T - AMBIENT TEMPERATURE ( C)
I
-

COLL
E
C
T
O
R CURRENT (
n
A
)
A
CB
O
V = 100V
CB
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
0.1
1
10
100
1000
160
180
200
220
240
260
RESISTANCE (k )
BV
-
BRE
A
KDOW
N
V
O
L
T
A
GE
(
V
)
CE
R
I = 1.0 mA
C
2N5551 / MMBT5551
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Input and Output Capacitance
vs Reverse Voltage
0.1
1
10
100
0
5
10
15
20
25
30
V - COLLECTOR VOLTAGE (V)
CA
P
A
CI
T
A
NC
E (p
F
)
C
f = 1.0 MHz
CE
C
cb
ib
Small Signal Current Gain
vs Collector Current
1
10
50
0
4
8
12
16
I - COLLECTOR CURRENT (mA)
h
-
SM
A
L
L

SI
GN
A
L
CU
RR
ENT

G
A
I
N
C
FE
FREG = 20 MHz
V = 10V
CE
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P
-
POW
E
R DI
SSI
P
A
TI
ON
(
m
W
)
D
o
TO-92
SOT-23
TO-92 Tape and Reel Data and Package Dimensions
September 1999, Rev. B
TO-92 Packaging
Configuration:
Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130mm x
83mm
Intermediate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102mm x 51mm
Immediate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE
DESCRIPTION
LEADCLIP
DIMENSION
QUANTITY
J18Z
TO-18 OPTION STD
NO LEAD CLIP
2.0 K / BOX
J05Z
TO-5 OPTION STD
NO LEAD CLIP
1.5 K / BOX
NO EOL
CODE
TO-92 STANDARD
STRAIGHT
NO LEADCLIP
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267mm x 375mm
Intermediate Box
FSCINT
Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Style
Quantity
EOL code
Reel
A
2,000
D26Z
E
2,000
D27Z
Ammo
M
2,000
D74Z
P
2,000
D75Z
Unit weight = 0.22 gm
Reel weight with components = 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
F63TNR
Label
5 Ammo boxes per
Intermediate Box
Customized
Label
327mm x 158mm x 135mm
Immediate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Intermediate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 2000
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label