2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
2N70
51
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
A
=25
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These rtings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
C unless otherwise noted
* Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
Symbol
Parameter
Ratings
Units
V
CEO
Collector-Emitter Voltage
100
V
V
CBO
Collector-Base Voltage
100
V
V
EBO
Emitter-Base Voltage
12
V
I
C
Collector Current
1.5
A
T
J
, T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage *
I
C
= 1.0mA, I
B
= 0
100
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
B
= 0
100
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 1.0mA, I
C
= 0
12
V
I
CBO
Collector Cut-off Current
V
CB
= 80V, I
E
= 0
0.1
A
I
CES
V
CE
= 80V, I
E
= 0
0.2
A
I
EBO
Emitter Cut-off Current
V
EB
= 7.0V, I
C
= 0
0.1
A
On Characteristics *
h
FE
DC Current Gain
V
CE
= 5.0V, I
C
= 100mA
V
CE
= 5.0V, I
C
= 1.0A
10,000
1,000
20,000
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 100mA, I
B
= 0.1mA
1.5
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 100mA, V
BE
=5.0V
2.0
V
Small Signal Characteristics
f
T
Transition Frequency
I
C
= 100mA, V
CE
=5.0V
200
MHz
h
fe
Small Signal Current Gain
V
CE
=5.0V, I
C
= 100mA,
f = 20MHz
10
100
1. Emitter 2. Collector 3. Base
2N7051
NPN Darlington Transistor
This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
Sourced from Process 06.
See 2N7052 for Characteristics.
TO-92
1
2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
2N70
51
Thermal Characteristics
T
A
=25
C unless otherwise noted
Symbol
Parameter
Max.
Units
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
2002 Fairchild Semiconductor Corporation
Rev. I1
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