ChipFind - документация

Электронный компонент: 699440

Скачать:  PDF   ZIP
2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
699440 Rev. A
69
944
0
H
i
gh V
o
lt
a
g
e P
o
wer
Da
rlingt
on T
r
ansi
st
or
699440
High Voltage Power Darlington Transistor
Features
Built-in Resistor at Base-Emitter: R
1
(Typ.) = 2000
Built-in Resistor at Base: R
B
(Typ.) = 700100
Absolute Maximum Ratings
* Pulse Test: PW = 300
s, Duty Cycle = 2% Pulsed
Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
600
V
V
CEO
Collector-Emitter Voltage
275
V
V
EBO
Emitter-Base Voltage
10
V
I
C
Collector Current (DC)
4
A
I
CP
* Collector Current (Pulse)
6
A
I
B
Base Current (DC)
0.5
A
P
C
Collector Dissipation (T
C
= 25
C)
40
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 500
A, I
E
= 0
600
V
BV
CER
Collector-Emitter Breakdown Voltage
I
C
= 1mA, R
BE
= 330
600
V
BV
CEO(sus)
Collector-Emitter Sustaining Voltage
I
C
= 1.5A, I
B
= 50mA, L = 25mH
275
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 500
A, I
C
= 0
10
V
I
CBO
Collector Cut-off Current
V
CB
= 600V, I
E
= 0
0.1
mA
I
EBO
Emitter Cut-off Current
V
EB
= 10V, I
C
= 0
0.1
mA
h
FE
DC Current Gain
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
1000
1000
5000
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 3A, I
B
= 20mA
1.5
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 2A, I
B
= 5mA
6.0
V
C
ob
Output Capatitance
V
E
= 10V, I
E
= 0, f = 1MHz
110
pF
TO-220
1.Base 2.Collector 3.Emitter
1
Equivalent Circuit
B
E
C
R
1
R
B
R1 2000
RB 700
2
www.fairchildsemi.com
699440 Rev. A
69
944
0
H
i
gh V
o
lt
a
g
e P
o
wer
Da
rlingt
on T
r
ansi
st
or
Typical Performance Characteristics
Figure 1. Static Characterstic
Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation
Voltage
Figure 4. Base-Emitter Saturation Voltage
Figure 5. R
B
, & R
1
vs. Ambient
Temperature
Figure 6. Output Capacitance
0
1
2
3
4
5
6
7
0
1
2
3
4
5
I
B
= 1.4mA
I
B
= 0.6mA
I
B
= 0.4mA
I
B
= 0
I
C
[A
],
COL
L
E
C
T
O
R CU
RRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
10
100
1k
10k
V
CE
= 5V
Ta = 75
o
C
Ta = 125
o
C
Ta = 25
o
C
Ta = - 25
o
C
DC C
URR
EN
T

G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.1
1
10
0.1
1
10
100
Ta = 75
o
C
Ta = 125
o
C
Ta = 25
o
C
Ta = - 25
o
C
I
C
= 400 I
B
V
CE
(sat) [V], SA
TURA
TIO
N
VO
LTA
G
E
I
C
[A], COLLECTOR CURRENT
0.1
1
10
0.1
1
10
100
Ta = 25
o
C
Ta = 75
o
C
Ta = 125
o
C
Ta = - 25
o
C
I
C
= 400 I
B
V
BE
(sat), SA
TU
R
A
TIO
N
V
O
LTA
G
E
I
C
[A], COLLECTOR CURRENT
-50
-25
0
25
50
75
100
125
150
100
1k
10k
R
1
R
B
R
B
& R
1
[



],
RE
SI
S
T
AN
C
E
T
A
[
o
C], AMBIENT TEMPERATURE
1
10
100
10
100
1000
f = 1MHz, I
E
= 0
C
ob [pF], O
U
PU
T C
A
PA
C
I
TA
N
C
E
V
CB
[V], COLLECTOR-BASE VOLTAGE
3
www.fairchildsemi.com
699440 Rev. A
69
944
0
H
i
gh V
o
lt
a
g
e P
o
wer
Da
rlingt
on T
r
ansi
st
or
Typical Performance Characteristics
(Continued)
Figure 6. Power Derating
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
45
50
P
C
[W],
C
O
L
L
EC
T
O
R PO
WER DISSIPATIO
N
T
C
[
o
C], CASE TEMPERATURE
4
www.fairchildsemi.com
699440 Rev. A
69
944
0
H
i
gh V
o
lt
a
g
e P
o
wer
Da
rlingt
on T
r
ansi
st
or
Mechanical Dimensions
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
5
www.fairchildsemi.com
699440 Rev. A
69
944
0
H
i
gh V
o
lt
a
g
e P
o
wer
Da
rlingt
on T
r
ansi
st
or
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
A
CExTM
ActiveArrayTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Rev. I14