2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB136
6
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 60
V
V
CEO
Collector-Emitter Voltage
- 60
V
V
EBO
Emitter-Base Voltage
- 7
V
I
C
Collector Current(DC)
- 3
A
I
B
Base Current
- 0.5
A
P
C
Collector Dissipation (T
a
=25
C)
2
W
P
C
Collector Dissipation (T
C
=25
C)
25
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= - 50mA, I
B
= 0
- 60
V
I
CBO
Collector Cut-off Current
V
CB
= - 60V, I
E
= 0
- 100
A
I
EBO
Emitter Cut-off Current
V
EB
= - 7V, I
C
= 0
- 100
A
h
FE1
h
FE2
DC Current Gain
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 3A
100
20
320
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= - 2A, I
B
= - 0.2A
- 0.5
- 1
V
V
BE
(on)
Base-Emitter ON Voltage
V
CE
= - 5V, I
C
= - 0.5A
- 0.7
- 1
V
f
T
Current Gain Bandwidth Product
V
CE
= - 5V, I
C
= - 0.5A
9
MHz
Classification
Y
G
h
FE1
100 ~ 200
150 ~ 320
KSB1366
LOW FREQUENCY POWER AMPLIFIER
Complement to KSD2012
1
1.Base 2.Collector 3.Emitter
TO-220F
2000 Fairchild Semiconductor International
KSB136
6
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Safe Operating Area
Figure 6. Power Derating
-0
-1
-2
-3
-4
-5
-0
-1
-2
-3
-4
-5
I
B
= -10mA
I
B
= -20mA
I
B
= -
70
mA
I
B
= -
80
m
A
I
B
= -6
0mA
I
B
= -50m
A
I
B
= -30mA
I
B
= -40mA
I
B
= 0
I
C
[A]
,
CO
L
L
ECT
O
R
CUR
RENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.01
-0.1
-1
-10
1
10
100
1000
V
CE
= -5V
h
FE
, DC C
URRENT
GAI
N
I
C
[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(
s
a
t
)
[
V], SAT
U
R
A
T
I
O
N
VO
L
T
AG
E
I
C
[A], COLLECTOR CURRENT
-0.0
-0.4
-0.8
-1.2
-1.6
-0
-1
-2
-3
-4
V
CE
= -5V
I
C
[
A
]
,
CO
L
L
E
CT
OR
CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-1
-10
-100
-0.1
-1
-10
1S
DC
V
CE
O
MA
X
100m
S
1m
S
10m
s
I
C
max(pulse)
I
C
max(DC)
I
C
[A], C
O
L
L
ECT
O
R CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
200
0
5
10
15
20
25
30
35
40
P
D
[W
], PO
W
E
R
D
I
SS
I
P
AT
IO
N
T
C
[
o
C], CASE TEMPERATURE
2000 Fairchild Semiconductor International
Rev. E
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not intended to be an exhaustive list of all such trademarks.
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Advance Information
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Design
This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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