Absolute Maximum Ratings*
TA = 25
O
C unless otherwise noted
Sym
Parameter
Value
Units
T
stg
Storage Temperature
-65 to +200
O
C
T
J
Operating Junction Temperature
-65 to +200
O
C
P
D
Total Power Dissipation at T
A
= 25
O
C
500
mW
Linear Derating Factor from T
A
= 25
O
C
3.33
mW/
O
C
R
OJA
Thermal Resistance Junction-to-Ambient
350
O
C/W
W
iv
Working Inverse Voltage
200
V
I
O
Average Rectified Current
200
mA
I
F
DC Forward Current (I
F
)
500
mA
i
f
Recurrent Peak Forward Current
600
mA
i
F(surge)
Peak Forward Surge Current (I
FSM
) Pulse Width = 1.0 second
1.0
Amp
Pulse Width = 1.0 microsecond
4.0
Amp
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
BAV103
Electrical Characteristics
TA = 25
O
C unless otherwise noted
SYM
CHARACTERISTICS
MIN
MAX
UNITS
TEST CONDITIONS
B
V
Breakdown Voltage
250
V
I
R
= 100 uA
I
R
Reverse Leakage
100
nA
V
R
= 200 V
100
uA
V
R
= 200 V T
A
= 150
O
C
V
F
Forward Voltage
1.00
V
I
F
= 100 mA
1.25
V
I
F
= 200 mA
C
T
Capacitance
5.0
pF
V
R
= 0.0 V,f = 1.0 MHz
T
RR
Reverse Recovery Time
50
ns
I
F
= I
R
30 mA I
RR
= 1.0 mA
R
L
= 100 Ohms
High Voltage,
General Purpose Diode
1997 Fairchild Semiconductor Corporation
General Description:
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
ORANGE
GREEN
Expansion Gap
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Definition of Terms
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Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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This datasheet contains final specifications. Fairchild
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In Design
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2
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