D45C1
1 / NZT45C1
1
D45C11
PNP Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P. See
NZT751 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
80
V
I
C
Collector Current - Continuous
4.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
NZT45C11
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
D45C11
*NZT45C11
P
D
Total Device Dissipation
Derate above 25
C
60
480
1.2
9.7
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
2.1
C/W
R
JA
Thermal Resistance, Junction to Ambient
62.5
103
C/W
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
TO-220
B
C
E
B
C
C
SOT-223
E
1997 Fairchild Semiconductor Corporation
D45C1
1 / NZT45C1
1
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
I
C
= 100 mA, I
B
= 0
60
V
I
CES
Collector-Cutoff Current
V
CB
= 90 V, I
E
= 0
10
A
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
100
A
PNP Current Driver
(continued)
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.2 A, V
CE
= 1.0 V
I
C
= 1.0 A, V
CE
= 1.0 V
40
20
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 50 mA
0.5
V
V
BE(
sat
)
Base-Emitter On Voltage
I
C
= 1.0 A, I
B
= 100 mA
1.3
V
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 4.0 V,
32
MHz
TRADEMARKS
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E
2
CMOS
TM
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Rev. E
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