0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45
0.040 (1.02)
1
3
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
0.255 (6.48)
ANODE
(CASE)
0.020 (0.51) 2X
1. Derate power dissipation linearly 1.70 mW/C above 25C ambient.
2. Derate power dissipation linearly 13.0 mW/C above 25C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16"
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into
a solid angle of 2
!
steradians.
PACKAGE DIMENSIONS
FEATURES
Good optical to mechanical alignment
Mechanically and wavelength matched
to the TO-18 series phototransistor
Hermetically sealed package
High irradiance level
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-65 to +125
C
Storage Temperature
T
STG
-65 to +150
C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec
C
Continuous Forward Current
I
F
100
mA
Forward Current (pw, 10s; 100Hz)
I
F
3
A
Forward Current (pw, 1s; 200Hz)
I
F
10
A
Reverse Voltage
V
R
3
V
Power Dissipation (T
A
= 25C)
(1)
P
D
170
mW
Power Dissipation (T
C
= 25C)
(2)
P
D
1.3
W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
F5D1/2/3
AlGaAs INFRARED EMITTING DIODE
DESCRIPTION
The F5D series is a 880 nm LED in a
narrow angle, TO-46 package.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Peak Emission Wavelength
I
F
= 100 mA
"
P
--
880
--
nm
Emission Angle at 1/2 Power
I
F
= 100 mA
#
--
8
--
Deg.
Forward Voltage
I
F
= 100 mA
V
F
--
--
1.7
V
Reverse Leakage Current
V
R
= 3 V
I
R
--
--
10
A
Total Power F5D1
(7)
I
F
= 100 mA
P
O
12.0
--
--
mW
Total Power F5D2
(7)
I
F
= 100 mA
P
O
9.0
--
--
mW
Total Power F5D3
(7)
I
F
= 100 mA
P
O
10.5
--
--
mW
Rise Time 0-90% of output
t
r
--
1.5
--
s
Fall Time 100-10% of output
t
f
--
1.5
--
s
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300286
4/24/01
1 OF 3
www.fairchildsemi.com
Figure 1. Power Output vs. Input Current
0.001
1
I
F
, INPUT CURRENT (mA)
0.01
0.1
1.0
10
10
100
1000
P
O
,
NORMALIZED POWER OUTPUT
I
F
= 100 mA
P
W
= 80
sec
RR = 30 Hz
T
A
= 25
C
NORMALIZED TO
PULSED INPUTS
Figure 3. Forward Voltage vs. Temperature
1
-25
25
2
3
4
0
100
150
125
V
F
,
FORWARD VOLTAGE (volts)
75
50
Figure 2. Power Output vs. Temperature
0.1
0.2
-25
T
A
, AMBIENT TEMPERATURE (
C)
0.4
0.6
0.8
1
2
4
6
8
10
20
0
25
50
150
P
O
,
NORMALIZED POWER OUTPUT
P
O
,
RELATIVE OUTPUT (%)
75
100
125
,
I
F
= 100 mA,
P
W
= 80
sec, f = 30 Hz
T
A
= 25
C
NORMALIZED TO
T
A
, AMBIENT TEMPERATURE (
C)
I
F
= 100 mA
I
F
= 1 A
I
F
= 0.5 A
I
F
= 1 A
Figure 5. Output vs. Input with L14G Detector
0.01
10
I
F
, INPUT CURRENT (mA)
0.1
1.0
10
100
100
1000
I
L
,
OUTPUT CURRENT (mA)
P
W
= 80
sec
RR = 30 Hz
TYPICAL OUPUTS
AT A DISTANCE OF
10 CM PULSED
INPUTS,
I
F
= 100 mA
P
W
= 80
sec
F = 30 Hz
Figure 4. Typical Radiation Pattern
0
-40
20
40
60
80
100
-80
-60
40
100
60
80
20
-20
0
, DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
F5D
F5D
I
F
L14G
I
L
5V
F5D1
P
O
,
RELATIVE OUTPUT (%)
Figure 6. Output vs. Wavelength
20
40
60
80
100
120
700
800
900
1000
, WAVE LENGTH (nm)
TYPICAL SPECTRAL
RESPONSE OF SILICON
PHOTOSENSORS
I
F
= 100 mA
T
A
= 25
C
I
F
= 10 mA
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2 OF 3
4/24/01
DS300286
F5D1/2/3
AlGaAs INFRARED EMITTING DIODE
DS300286
4/24/01
3 OF 3
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F5D1/2/3
AlGaAs INFRARED EMITTING DIODE
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HERE-
IN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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