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2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
HGTG20N120CND
63A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N120CND is a
N
on-
P
unch
T
hrough (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49305.
Features
63A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 340ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N120CND
TO-247
20N120CND
NOTE: When ordering, use the entire part number.
G
C
E
E
G
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG20N120CND
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
63
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C110
30
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
160
A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . SSOA
100A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
390
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.12
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
8
s
Short Circuit Withstand Time (Note 2) at V
GE
= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
15
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 960V, T
J
= 125
o
C, R
G
= 3
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= 1200V
T
C
= 25
o
C
-
-
250
A
T
C
= 125
o
C
-
450
-
A
T
C
= 150
o
C
-
-
6
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 20A,
V
GE
= 15V
T
C
= 25
o
C
-
2.1
2.4
V
T
C
= 150
o
C
-
2.9
3.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 150
A, V
CE
= V
GE
6.0
6.9
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 3
,
V
GE
= 15V,
L = 200
H, V
CE(PK)
= 1200V
100
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 20A, V
CE
= 600V
-
10.2
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 20A,
V
CE
= 600V
V
GE
= 15V
-
155
200
nC
V
GE
= 20V
-
200
250
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 20A
V
CE
= 960V
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit (Figure 20)
-
23
28
ns
Current Rise Time
t
rI
-
17
22
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
200
240
ns
Current Fall Time
t
fI
-
220
270
ns
Turn-On Energy
E
ON
-
2.0
2.5
mJ
Turn-Off Energy (Note 3)
E
OFF
-
2.8
3.3
mJ
HGTG20N120CND
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= 20A
V
CE
= 960V
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit (Figure 20)
-
21
26
ns
Current Rise Time
t
rI
-
17
22
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
225
270
ns
Current Fall Time
t
fI
-
340
400
ns
Turn-On Energy
E
ON
-
3.8
5.0
mJ
Turn-Off Energy (Note 3)
E
OFF
-
4.6
5.3
mJ
Diode Forward Voltage
V
EC
I
EC
= 20A
-
2.6
3.2
V
Diode Reverse Recovery Time
t
rr
I
EC
= 20A, dI
EC
/dt = 200A/
s
-
62
75
ns
I
EC
= 2A, dI
EC
/dt = 200A/
s
-
44
55
ns
Thermal Resistance Junction To Case
R
JC
IGBT
-
-
0.32
o
C/W
Diode
-
-
0.75
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
CE
,
DC COLLECT
OR CURRENT (A)
50
0
20
V
GE
= 15V
25
75
100
125
150
40
30
10
50
60
70
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
80
0
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
20
40
600
800
400
200
1000
1200
0
100
120
60
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 200
H
HGTG20N120CND
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
T
J
= 150
o
C, R
G
= 3
, L = 1mH, V
CE
= 960V
f
MAX
,
OPERA
TING FREQ
UENCY (kHz)
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
10
40
30
50
10
100
20
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
T
C
V
GE
110
o
C
12V
15V
15V
75
o
C
110
o
C
75
o
C
12V
P
C
= CONDUCTION DISSIPATION
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.32
o
C/W, SEE NOTES
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
,
PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
,
SHOR
T CIRCUIT
WITHST
AND
TIME
(
s)
12
13
14
15
16
5
10
15
20
100
150
200
300
t
SC
I
SC
25
250
V
CE
= 960V, R
G
= 3
, T
J
= 125
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
0
20
40
6
8
10
80
100
60
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
GE
= 12V
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
40
60
80
0
2
4
6
8
20
100
0
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
s
E
ON
,
TURN-ON
ENERGY LOSS (mJ)
10
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
8
4
2
15
10
5
12
25
30
0
35
40
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 960V
20
6
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
,
TURN-OFF
ENERGY LOSS (mJ)
0
15
10
5
1
4
2
5
7
8
25
30
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
35
40
3
20
HGTG20N120CND
2001 Fairchild Semiconductor Corporation
HGTG20N120CND Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y
TIME
(ns)
5
10
15
20
25
30
35
15
40
25
30
35
40
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
10
0
20
80
60
30
5
40
25
20
15
40
35
100
120
R
G
= 3
, L = 1mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
10
20
5
250
15
150
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
,
TURN-OFF
DELA
Y TIME
(ns)
30
450
40
35
350
400
25
300
R
G
= 3
, L = 1mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
ALL
TIME
(ns)
10
5
100
300
15
200
500
700
30
20
40
35
R
G
= 3
, L = 1mH, V
CE
= 960V
400
600
25
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
I
CE
,
COLLECT
OR
T
O
EMITTER CURRENT (A)
0
50
100
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
14
15
250
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
CE
= 20V
6
V
GE
,
GA
TE
T
O
EMITTER
V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
5
20
0
0
100
50
150
V
CE
= 400V
V
CE
= 800V
I
G(REF)
= 2mA, R
L
= 30
, T
C
= 25
o
C
V
CE
= 1200V
10
15
200
HGTG20N120CND
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