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Электронный компонент: G20N60C3

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2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
HGTG20N60C3, HGTP20N60C3,
HGT1S20N60C3S
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49178.
Symbol
Features
45A, 600V, T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60C3
TO-247
G20N60C3
HGTP20N60C3
TO-220AB
G20N60C3
HGT1S20N60C3S
TO-263AB
G20N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
E
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
45
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
20
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
300
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
20A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
164
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/
o
C
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
4
s
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
10
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 10
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
28
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 150
o
C
-
-
5.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
V
GE
= 15V
T
C
= 25
o
C
-
1.4
1.8
V
T
C
= 150
o
C
-
1.5
1.9
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
A, V
CE
= V
GE
3.4
4.8
6.3
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
=
10
,
V
GE
= 15V,
L = 100
H
V
CE
= 480V
120
-
-
A
V
CE
= 600V
20
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
CE
= I
C110
, V
CE
= 0.5 BV
CES
-
8.4
-
V
On-State Gate Charge
Q
G(ON)
I
CE
= I
C110
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
91
110
nC
V
GE
= 20V
-
122
145
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 1mH
Test Circuit (Figure 17)
-
28
32
ns
Current Rise Time
t
rI
-
24
28
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
151
210
ns
Current Fall Time
t
fI
-
55
98
ns
Turn-On Energy (Note 4)
E
ON1
-
295
320
J
Turn-On Energy (Note 4)
E
ON2
-
500
550
J
Turn-Off Energy (Note 3)
E
OFF
-
500
700
J
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10
L = 1mH
Test Circuit (Figure 17)
-
28
32
ns
Current Rise Time
t
rI
-
24
28
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
280
450
ns
Current Fall Time
t
fI
-
108
210
ns
Turn-On Energy (Note 4)
E
ON1
-
380
410
J
Turn-On Energy (Note 4)
E
ON2
-
1.0
1.1
mJ
Turn-Off Energy (Note 3)
E
OFF
-
1.2
1.7
mJ
Thermal Resistance Junction To Case
R
JC
-
-
0.76
o
C/W
NOTES:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 17.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
,
DC COL
L
E
CT
OR CURRENT
(
A
)
50
V
GE
= 15V
25
75
100
125
150
50
30
10
20
40
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
60
700
40
I
CE
, CO
L
L
ECT
O
R T
O
EM
IT
T
E
R CURRENT
(
A
)
20
300
400
200
100
500
600
0
80
100
120
140
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 100
H
0
f
MA
X
, OP
E
R
A
T
ING F
R
E
Q
U
E
NCY
(
k
Hz)
2
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
5
1
100
40
10
20
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.76
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C
V
GE
110
o
C
10V
15V
75
o
C
110
o
C
75
o
C
10V
15V
T
J
= 150
o
C, R
G
= 10
,
L = 1mH, V
CE
= 480V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T
CIRCUIT
CURRENT
(
A
)
t
SC
, SHOR
T
CIRCUI
T
WI
T
H
ST
AN
D T
I
M
E
(
s)
10
11
12
13
14
15
2
4
6
8
150
200
250
300
350
t
SC
I
SC
10
12
14
400
450
V
CE
= 360V, R
G
= 10
, T
J
= 125
o
C
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
2
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, CO
L
L
ECT
O
R T
O
EM
IT
T
E
R CURRENT
(
A
)
0
20
8
4
80
60
40
100
6
10
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
I
CE
,
COL
L
ECT
O
R T
O

E
M
IT
T
E
R CURR
E
N
T
(
A
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
150
200
250
300
0
2
3
0
50
1
4
100
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
5
6
E
ON2
, T
URN-
O
N
ENERGY L
O
SS (
m
J
)
2.5
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2.0
1.0
0.5
20
10
25
15
5
3.0
0
30
35
40
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
R
G
= 10
, L = 1mH, V
CE
= 480V
3.5
4.0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OF
F
, T
URN-
O
F
F
ENERGY L
O
SS (
m
J
)
0
0.5
25
20
10
15
5
1.0
2.5
2.0
1.5
30
35
40
3.0
T
J
= 25
o
C; V
GE
= 10V OR 15V
T
J
= 150
o
C; V
GE
= 10V OR 15V
R
G
= 10
, L = 1mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
T
URN-
ON
DEL
A
Y T
I
M
E
(
n
s
)
20
10
15
5
25
30
35
40
40
30
20
35
25
45
50
R
G
= 10
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
R
I
SE T
I
M
E
(
n
s
)
25
0
50
75
125
100
150
10
15
5
40
30
20
35
25
175
200
T
J
= 25
o
C AND T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
R
G
= 10
, L = 1mH, V
CE
= 480V
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
2001 Fairchild Semiconductor Corporation
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
10
15
25
5
250
20
100
175
125
150
200
225
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(
O
FF)
I
, T
URN-
OF
F
DEL
A
Y T
I
M
E
(
n
s
)
30
35
40
R
G
= 10
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
275
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
A
L
L

T
I
ME
(
n
s
)
60
80
100
40
50
70
90
10
20
25
5
15
30
35
40
R
G
= 10
, L = 1mH, V
CE
= 480V
110
120
T
J
= 150
o
C, V
GE
= 10V OR V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
I
CE
, CO
L
L
ECT
O
R
T
O
EM
IT
T
E
R CURRENT
(
A
)
0
50
100
150
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
12
13
14
15
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -55
o
C
Q
g
, GATE CHARGE (nC)
0
8
10
6
4
2
0
10
20
40
V
GE
, GA
T
E
T
O
E
M
IT
T
E
R V
O
L
T
A
G
E
(V
)
50
100
30
12
14
16
I
G (REF)
= 1mA, R
L
= 15
, T
C
= 25
o
C
V
CE
= 400V
V
CE
= 200V
V
CE
= 600V
60
70
80
90
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
C, CAP
A
C
IT
ANC
E

(
n
F
)
1
2
3
4
5
C
IES
C
OES
C
RES
FREQUENCY = 1MHz
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S