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PACKAGE
4/24/03
Page 1 of 9
2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
H11AA814 SCHEMATIC
H11A617 & H11A817 SCHEMATIC
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
Compact 4-pin package
Current transfer ratio in selected groups:
H11AA814:
20-300%
H11A817:
50-600%
H11AA814A: 50-150%
H11A817A: 80-160%
H11A617A:
40%-80%
H11A817B: 130-260%
H11A617B:
63%-125%
H11A817C: 200-400%
H11A617C: 100%-200%
H11A817D: 300-600%
H11A617D:
160%-320%
Minimum BV
CEO
of 70V guaranteed
APPLICATIONS
H11AA814 Series
AC line monitor
Unknown polarity DC sensor
Telephone line interface
H11A617 and H11A817 Series
Power supply regulators
Digital logic inputs
Microprocessor inputs
4
1
1
2
4
3 EMITTER
COLLECTOR
1
2
4
3 EMITTER
COLLECTOR
ANODE
CATHODE
4/24/03
Page 2 of 9
2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
*Typical values at T
A
= 25C.
Parameter
Symbol
Device
Value
Units
TOTAL DEVICE
Storage Temperature
T
STG
All
-55 to +150
C
Operating Temperature
T
OPR
All
-55 to +100
C
Lead Solder Temperature
T
SOL
All
260 for 10 sec
C
Total Device Power Dissipation (-55C to 50 C)
P
D
All
200
mW
EMITTER
Continuous Forward Current
I
F
All
50
mA
Reverse Voltage
V
R
H11A617A/B/C/D
H11A817/A/B/C/D
6
5
V
Forward Current - Peak (1 s pulse, 300 pps)
I
F
(pk)
All
1.0
A
LED Power Dissipation (25C ambient)
Derate above 25C
P
D
All
100
mW
1.33
mW/C
DETECTOR
Collector-Emitter Voltage
V
CEO
All
70
V
Emitter-Collector Voltage
V
ECO
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
6
7
6
V
Continuous Collector Current
I
C
All
50
mA
Detector Power Dissipation (25C ambient)
Derate above 25C
P
D
All
150
mW
2.0
mW/C
ELECTRICAL CHARACTERISTICS
(T
A
= 25C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol
Device
Min
Typ*
Max
Unit
EMITTER
(I
F
= 60 mA)
V
F
H11A617A/B/C/D
1.35
1.65
V
Input Forward Voltage
(I
F
= 20 mA)
H11A817/A/B/C/D
1.2
1.5
(I
F
= 20 mA)
H11AA814/A
1.2
1.5
Reverse Leakage Current
(V
R
= 6.0 V)
I
R
H11A617A/B/C/D
.001
10
A
(V
R
= 5.0 V)
H11A817/A/B/C/D
DETECTOR
Collector-Emitter Breakdown
Voltage
(I
C
= 1.0 mA, I
F
= 0)
BV
CEO
ALL
70
100
V
Emitter-Collector Breakdown
Voltage
(I
E
= 100 A, I
F
= 0)
BV
ECO
H11AA814/A
6
10
V
H11A617A/B/C/D
7
H11A817/A/B/C/D
6
Collector-Emitter Dark Current
(V
CE
= 10V, I
F
= 0)
I
CEO
H11AA814/A, H11A817/A/B/C/D,
H11A617C/D
1
100
nA
H11A617A/B
50
Collector-Emitter Capacitance
(V
CE
= 0 V, f = 1 MHz)
C
CE
ALL
8
pF
4/24/03
Page 3 of 9
2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
*Typical values at T
A
= 25C.
NOTES
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
TRANSFER CHARACTERISTICS
(T
A
= 25C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol
Device
Min
Typ*
Max
Unit
Current Transfer
Ratio
(I
F
= 1 mA, V
CE
= 5 V) (note 1)
CTR
H11AA814
20
300
%
(I
F
= 1 mA, V
CE
= 5 V) (note 1)
H11AA814A
50
150
%
(I
F
= 10 mA, V
CE
= 5 V) (note 1)
H11A617A
40
80
%
H11A617B
63
125
%
H11A617C
100
200
%
H11A617D
160
320
%
(I
F
= 5 mA, V
CE
= 5 V) (note 1)
H11A817
50
600
%
H11A817A
80
160
%
H11A817B
130
260
%
H11A817C
200
400
%
H11A817D
300
600
%
(I
F
= 1 mA, V
CE
= 5 V) (note 1)
H11A617A
13
%
H11A617B
22
%
H11A617C
34
%
H11A617D
56
%
Collector-Emitter
Saturation Voltage
(I
C
= 1 mA, I
F
= 20 mA)
(I
C
= 2.5 mA, I
F
= 10 mA)
(I
C
= 1 mA, I
F
= 20 mA)
V
CE (SAT)
H11AA814/A
0.2
V
H11A617A/B/C/D
0.4
H11A817/A/B/C/D
0.2
AC Characteristic
Rise Time
(I
C
= 2 mA, V
CE
= 2 V, R
L
= 100V) (note 2)
t
r
ALL
2.4
18
s
Fall Time
(I
C
= 2 mA, V
CE
= 2 V, R
L
= 100V) (note 2)
t
f
ALL
2.4
18
s
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Min
Typ*
Max
Units
Input-Output Isolation Voltage (note 3)
f = 60Hz, t = 1 min
V
ISO
5300
Vac(rms)
Isolation Resistance
(V
I-O
= 500 VDC)
R
ISO
10
11
Isolation Capacitance
(V
I-O
= 0, f = 1 MHz)
C
ISO
0.5
pf
4/24/03
Page 4 of 9
2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
5
-50
-25
0
0
0.1
0.2
0.5
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.0
2.0
5
10
20
50
100
.02
.04
.06
.08
.1
.12
.14
25
50
75
100
125
10
15
20
25
I
F
- FORWARD CURRENT (mA)
CTR NORMALIZED @ I
F
= 5 mA,
V
CE
= 5
V
,

T
A
= 25C
V
CE (SA
T)
- COLLECT
OR-EMITTER
SA
TURA
TION V
O
L
T
A
GE
(V)
V
F
- FOR
W
ARD
V
O
L
T
A
GE (V)
NORMALIZED CTR
CTR NORMALIZED @ I
F
= 5 mA,
V
CE
= 5
V
,

T
A
= 25C
NORMALIZED CTR
30
-50
0.4
0.6
0.8
1
1.2
-25
0
+25
+50
+75
T
A
- AMBIENT TEMPERATURE (C)
T
A
- AMBIENT TEMPERATURE (C)
I
F
- FORWARD CURRENT (mA)
+100
Fig. 1 Normalized CTR vs. Forward Current
Fig. 3 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
Fig. 2 Normalized CTR vs. Ambient Temperature
Fig. 4 Forward Voltage vs. Forward Current
I
F
= 20 mA
I
C
= 1 mA
I
F
= 10 mA
I
F
= 5 mA
T = -55C
T = 25C
T = 100C
0
0
5
10
15
20
25
1
2
3
4
5
6
7
8
9
10
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5 Collector Current
vs. Collector-Emitter Voltage
I
F
= 5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 20 mA
I
C -
COLLECT
OR CURRENT (mA)
4/24/03
Page 5 of 9
2003 Fairchild Semiconductor Corporation
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
0
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
25
50
75
100
125
I
CEO -
COLLECT
OR-EMITTER CURRENT (
A)
T
A
- AMBIENT TEMPERATURE (C)
Fig. 6 Collector Leakage Current
vs. Ambient Temperature
V
CE
= 10 V
0.1
0.1
1
10
100
1000
1
10
100
R - LOAD RESISTOR (KV)
Fig. 7 Rise and Fall Time
vs. Load Resistor
t
off
t
on
t
f
T
r/
T
f-
RISE AND F
ALL
TIME (
s)
t
r
I
F
= 5 mA
V
CC
= 5 V
T
A
= 25C
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT
WAVE FORMS
t
r
t
f
INPUT
I
F
R
L
= 100
V
CC
= 10V
OUTPUT
Temperature (
C)
250
200
150
100
50
0
0
1
2
3
4
5
Time (Min)
220
C: 10 sec to 40 sec
Time > 183
C: 120 sec to 180 sec
225
C
10%
90%
Figure 8. Switching Time Test Circuit and Waveforms
Recommended Thermal Reflow Profile for Surface Mount DIP Package
I
C
Adjust I
F
to produce I
C
= 2 mA