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Электронный компонент: H11AA2SD

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2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
October 2005
H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
H11AA1,
H11AA3,
H11AA2,
H11AA4 A
C
Input/Phototransistor Optocoupler
s
H11AA1, H11AA3, H11AA2, H11AA4
AC Input/Phototransistor Optocouplers
Features
Bi-polar emitter input
Built-in reverse polarity input protection
Underwriters Laboratory (UL) recognized File #E90700
VDE approved File #E94766 (ordering option `300')
Applications
AC line monitor
Unknown polarity DC sensor
Telephone line interface
Description
The H11AAX series consists of two gallium-arsenide infrared
emitting diodes connected in inverse parallel driving a single
silicon phototransistor output.
6
1
6
1
6
1
1
2
6
5 COLL
4 EMITTER
BASE
3
Parameter Symbol
Device
Value
Units
TOTAL DEVICE
Storage Temperature
T
STG
All
-55 to +150
C
Operating Temperature
T
OPR
All
-55 to +100
C
Lead Solder Temperature
T
SOL
All
260 for 10 sec
C
Total Device Power Dissipation
P
D
All 350 mW
Derate Linearly From 25C
4.6
mW/C
EMITTER
Continuous Forward Current
I
F
All 100 mA
Forward Current - Peak (1 s pulse, 300 pps)
I
F(pk)
All 1.0 A
LED Power Dissipation
P
D
All 200
mW
Derate Linearly From 25C
2.6
mW/C
DETECTOR
Detector Power Dissipation
P
D
All 300 mW
Derate above 25C
4.0 mW/C
2
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
H11AA1,
H11AA3,
H11AA2,
H11AA4 A
C
Input/Phototransistor Optocoupler
s
Electrical Characteristics
(T
A
= 25C Unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
(T
A
= 25C Unless otherwise specified.)
Isolation Characteristics
Parameter Test
Conditions
Symbol
Device
Min
Typ
Max
Unit
EMITTER
Input Forward Voltage
I
F
= 10 mA
V
F
All 1.2
1.5
V
Capacitance V
F
= 0 V, f = 1.0 MHz
C
J
All 80
pF
DETECTOR
Breakdown Voltage
Collector to Emitter
I
C
= 1.0 mA, I
F
= 0
BV
CEO
All 30
V
Collector to Base
I
C
= 100 A, I
F
= 0
BV
CBO
All 70
V
Emitter to Base
I
E
= 100 A, I
F
= 0
BV
EBO
All 5
V
Emitter to Collector
I
E
= 100 A, I
F
= 0
BV
ECO
All 7
V
Leakage Current
Collector to Emitter
V
CE
= 10 V, I
F
= 0
I
CEO
H11AA1,3,4 50
nA
H11AA2 200
Capacitance
Collector to Emitter
V
CE
= 0, f = 1 MHz
C
CE
All 10
pF
Collector to Base
V
CE
= 0, f = 1 MHz
C
CB
All 80
pF
Emitter to Base
V
CE
= 0, f = 1 MHz
C
EB
All 15
pF
Characteristics Test
Conditions
Symbol
Device
Min
Typ
Max
Units
Current Transfer Ratio,
Collector to Emitter
I
F
= 10 mA, V
CE
= 10 V
CTR
CE
H11AA4 100
%
H11AA3 50
H11AA1 20
H11AA2 10
Current Transfer Ratio, Symmetry
I
F
= 10 mA, V
CE
= 10 V (Figure.8)
All
.33
3.0
Saturation Voltage
Collector to Emitter
I
F
= 10 mA, I
CE
= 0.5 mA
V
CE(SAT)
All .40
V
Characteristic Test
Conditions
Symbol
Min
Typ
Max
Units
Package Capacitance input/output
V
I-O
= 0, f = 1 MHz
C
I-O
0.7 pF
Isolation Voltage
f = 60 Hz, t = 1 min.
V
ISO
5300 VAC(RMS)
Isolation Resistance
V
I-O
= 500 VDC
R
ISO
1011
3
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
H11AA1,
H11AA3,
H11AA2,
H11AA4 A
C
Input/Phototransistor Optocoupler
s
Fig. 2 Normalized CTR vs. Forward Current
I
F
- FORWARD CURRENT (mA)
0
5
10
15
20
N
O
R
MALIZE
D
C
T
R
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE
= 5.0V
T
A
= 25
C
Fig. 3 Normalized CTR vs. Ambient Temperature
-75
-50
-25
0
25
50
75
100
125
N
O
R
MALIZE
D

C
T
R
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Normalized to
I
F
= 10 mA
T
A
= 25
C
I
F
= 10 mA
I
F
= 20 mA
T
A
- AMBIENT TEMPERATURE (
C)
I
F
= 5 mA
Normalized to
I
F
= 10 mA
Fig. 5 CTR vs. RBE (Saturated)
R
BE
- BASE RESISTANCE (k)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10
100
1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
CE
= 0.3 V
I
F
= 5 mA
I
F
= 10 mA
I
F
= 20 mA
Fig. 4 CTR vs. RBE (Unsaturated)
R
BE
- BASE RESISTANCE (k)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10
100
1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
V
CE
= 5.0 V
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
I
C
- COLLECTOR CURRENT (mA)
V
CE (SAT)
- COLLECTOR-EMITTER SATURATION
VOLTAGE (V)
0.01
0.1
1
10
0.001
0.01
0.1
1
10
100
I
F
= 2.5 mA
T
A
= 25C
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
Fig. 1 Input Voltage vs. Input Current
V
F
- INPUT VOLTAGE (V)
I
F

- I
N
P
U
T
C
U
RR
E
N
T

(m
A
)
-100
-80
-60
-40
-20
0
20
40
60
80
100
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
4
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
H11AA1,
H11AA3,
H11AA2,
H11AA4 A
C
Input/Phototransistor Optocoupler
s
N
O
R
M
A
L
IZ
E
D

t
o
n

-

(
t
o
n
(
R
B
E
)
/

t
o
n
(
o
p
e
n
)
)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Fig. 8 Normalized t
on
vs. R
BE
R
BE
- BASE RESISTANCE (k
10
100
1000
10000
100000
V
CC =
10 V
I
C
= 2 mA
R
L
= 100
Fig. 7 Switching Speed vs. Load Resistor
R-LOAD RESISTOR (k
0.1
1
10
100
SWIT
C
HI
N
G SPE
E
D

-


(
s)
0.1
1
10
100
1000
T
off
I
F
= 10 mA
V
CC
= 10 V
T
A
= 25C
T
r
T
on
T
f
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
CC =
10 V
I
C
= 2 mA
R
L
= 100
N
O
R
M
A
L
I
Z
E
D

t
of
f

-

(
t
of
f
(
R
B
E
)

/

t
of
f
(
o
p
e
n
)
)
Fig. 9 Normalized t
off
vs. R
BE
R
BE
- BASE RESISTANCE (k)
10
100
1000
10000
100000
Fig. 10 Dark Current vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
C)
0
20
40
60
80
100
I
CE
O
-

CO
L
L
E
C
T
O
R

-
E
M
I
T
T
E
R

D
A
R
K CUR
R
E
N
T
(
n
A
)
0.001
0.01
0.1
1
10
100
1000
10000
V
CE
= 10 V
T
A
= 25
C
V
CE
- COLLECTOR TO EMITTER VOLTAGE (V)
.01
.05
.1
.5
5
1
10
N
O
R
M
A
L
IZ
E
D

O
UTP
UT CUR
R
E
N
T
.01
.005
.05
.1
.5
1
5
10
Fig. 11 Output Symmetry Characteristics
I
F
=
I
- 10mA
I
I
F
=
I
10mA
I
NORMALIZED TO:
V
CE
= 10 V
I
F
= 10 mA
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
I
F
=
10 mA
5
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
H11AA1,
H11AA3,
H11AA2,
H11AA4 A
C
Input/Phototransistor Optocoupler
s
Note
All dimensions are in inches (millimeters)
Lead Coplanarity : 0.004 (0.10) MAX
0.270 (6.86)
0.240 (6.10)
0.350 (8.89)
0.330 (8.38)
0.300 (7.62)
TYP
0.405 (10.30)
MAX
0.315 (8.00)
MIN
0.016 (0.40) MIN
2
5
PIN 1
ID.
0.016 (0.41)
0.008 (0.20)
0.100 (2.54)
TYP
0.022 (0.56)
0.016 (0.41)
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.165 (4.18)
4
3
0.020 (0.51)
MIN
1
6
0.100 (2.54)
TYP
0.020 (0.51)
MIN
0.350 (8.89)
0.330 (8.38)
0.270 (6.86)
0.240 (6.10)
PIN 1
ID.
0.022 (0.56)
0.016 (0.41)
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.135 (3.43)
0.300 (7.62)
TYP
0
to 15
0.154 (3.90)
0.100 (2.54)
SEATI
N
G PL
AN
E
0.016 (0.40)
0.008 (0.20)
SEATING PLANE
0.016 (0.40)
0.008 (0.20)
0.070 (1.78)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.154 (3.90)
0.100 (2.54)
0.200 (5.08)
0.135 (3.43)
0.004 (0.10)
MIN
0.270 (6.86)
0.240 (6.10)
0.400 (10.16)
TYP
0
to 15
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0.070 (1.78)
0.060 (1.52)
0.030 (0.76)
0.100 (2.54)
0.295 (7.49)
0.415 (10.54)
Package Dimensions (Surface Mount)
Package Dimensions (Through Hole)
Package Dimensions (0.4"Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
6
www.fairchildsemi.com
H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
H11AA1,
H11AA3,
H11AA2,
H11AA4 A
C
Input/Phototransistor Optocoupler
s
Ordering Information
Carrier Tape Specifications ("D" Taping Orientation)
Note
All dimensions are in millimeters
Option
Order Entry Identifier
Description
S
.S
Surface Mount Lead Bend
SD
.SD
Surface Mount; Tape and Reel
W
.W
0.4" Lead Spacing
300
.300
VDE 0884
300W
.300W
VDE 0884, 0.4" Lead Spacing
3S
.3S
VDE 0884, Surface Mount
3SD
.3SD
VDE 0884, Surface Mount, Tape and Reel
4.0
0.1
1.55
0.05
User Direction of Feed
4.0
0.1
1.75
0.10
7.5
0.1
16.0
0.3
12.0
0.1
0.30
0.05
13.2
0.2
4.85
0.20
0.1 MAX
10.30
0.20
9.55
0.20
1.6
0.1
7
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
H11AA1,
H11AA3,
H11AA2,
H11AA4 A
C
Input/Phototransistor Optocoupler
s
Marking Information
Reflow Profile (Black Package, No Suffix)
Definitions
1 Fairchild
logo
2 Device
number
3
VDE mark (Note: Only appears on parts ordered with VDE
option See order entry table)
4
Two digit year code, e.g., `03'
5
Two digit work week ranging from `01' to `53'
6
Assembly package code
H11AA1
V XX YY K
1
2
6
4
3
5
Peak reflow temperature: 225
C (package surface temperature)
Time of temperature higher than 183
C for 60150 seconds
One time soldering reflow is recommended
215
C, 1030 s
225
C peak
Time (Minute)
0
300
250
200
150
100
50
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Te
mper
a
tur
e (

C)
Time above 183
C, 60150 sec
Ramp up = 3
C/sec
8
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H11AA1, H11AA3, H11AA2, H11AA4 Rev. 1.0.0
H11AA1,
H11AA3,
H11AA2,
H11AA4 A
C
Input/Phototransistor Optocoupler
s
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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