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Электронный компонент: H11AG2

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DESCRIPTION
The H11AG series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of the high current transfer
ratio at both low output voltage and low input current.
This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics
isolation applications.
PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
APPLICATIONS
CMOS driven solid state reliability
Telephone ring detector
Digital logic isolation
FEATURES
High efficiency low degradation liquid epitaxial IRED
Logic level compatible, input and output currents, with
CMOS and LS/TTL
High DC current transfer ratio at low input currents
Underwriters Laboratory (UL) recognized File #E90700
6
1
6
1
6
1
1
2
6
5 COL
4 EMITTER
BASE
ANODE
CATHODE
N/C 3
SCHEMATIC
Parameters
Symbol
Device
Value
Units
TOTAL DEVICE
T
STG
All
-55 to +150
C
Storage Temperature
Operating Temperature
T
OPR
All
-55 to +100
C
Lead Solder Temperature
T
SOL
All
260 for 10 sec
C
Total Device Power Dissipation @ 25C (LED plus detector)
P
D
All
260
mW
Derate Linearly From 25C
3.5
mW/C
EMITTER
I
F
All
50
mA
Continuous Forward Current
Reverse Voltage
V
R
All
6
V
Forward Current - Peak (1 s pulse, 300 pps)
I
F
(pk)
All
3.0
A
LED Power Dissipation 25C Ambient
P
D
All
75
mW
Derate Linearly From 25C
1.0
mW/C
DETECTOR
Detector Power Dissipation @ 25C
P
D
All
150
mW
Derate Linearly from 25C
2.0
mW/C
Continuous Collector Current
All
50
mA
2001 Fairchild Semiconductor Corporation
DS300213
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ABSOLUTE MAXIMUM RATINGS
Parameters
Test Conditions
Symbol
Device
Min
Typ
Max
Units
EMITTER
Input Forward Voltage
I
F
= 1 mA
V
F
All
1.5
V
Reverse Leakage Current
V
R
= 5 V, T
A
= 25C
I
R
All
10
A
V
R
= 5 V, T
A
= 70C
I
R
All
100
A
Capacitance
V = 0, f = 1.0 MHz
C
J
All
100
pF
DETECTOR
Breakdown Voltage
Collector to Emitter
I
C
= 1.0 mA, I
F
= 0
BV
CEO
All
30
V
Collector to Base
I
C
= 100
A, I
F
= 0
BV
CBO
All
70
V
Emitter to Collector
I
C
= 100
A, I
F
= 0
BV
ECO
All
7
V
Leakage Current
Collector to Emitter
V
CE
= 10 V, I
F
= 0
I
CEO
All
5
10
A
Capacitance
V
CE
= 10 V, f = 1 MHz
C
CE
All
2
pF
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
= 0-70C Unless otherwise specified.)
DC Characteristics
Test Conditions
Symbol
Device
Min
Typ
Max
Units
H11AG1
300
I
F
= 1 mA, V
CE
= 5 V
CTR
H11AG2
200
H11AG3
100
H11AG1
100
Current Transfer Ratio
I
F
= 1 mA, V
CE
= 0.6 V
CTR
H11AG2
50
%
H11AG3
20
I
F
= 0.2 mA, V
CE
= 1.5 V
CTR
H11AG1
100
H11AG2
50
Saturation Voltage
I
F
= 2.0 mA, I
C
= 0.5 mA
V
CE(SAT)
All
.40
V
AC Characteristics
Test Conditions
Symbol
Device
Min
Typ
Max
Units
Non-Saturated Switching Times
Turn-On Time
R
L
= 100
, I
F
= 1 mA, V
CC
= 5 V
t
on
All
5
S
Turn-Off Time
R
L
= 100
, I
F
= 1 mA, V
CC
= 5 V
t
off
All
5
S
TRANSFER CHARACTERISTICS
(T
A
= 25C Unless otherwise specified.)
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Parameters
Test Conditions
Symbol
Min
Typ
Max
Units
Input-Output Isolation Voltage
I
I-0
1 A, t = 1 min.
V
ISO
5300
Vac(rms)
ISOLATION CHARACTERISTICS
PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
DS300213
1/28/02
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Figure 1. LED Forward Voltage vs. Forward Current
I
F
- LED FORWARD CURRENT (mA)
0.1
1
10
100
V
F

-

F
O
R
W
A
R
D

V
O
L
T
A
G
E

(
V
)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Figure 2. Normalized Current Transfer Ratio vs. Forward Current
I
F
- FORWARD CURRENT - mA
0.1
1
10
100
N
O
R
M
A
L
I
Z
E
D

C
T
R
C
E
0.2
0.4
0.6
0.8
1.0
1.2
Figure 3. Normalized CTR vs. Temperature
T
A
- AMBIENT TEMPERATURE -
o
C
-60
-40
-20
0
20
40
60
80
100
N
O
R
M
A
L
I
Z
E
D

C
T
R
C
E
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T
A
o
C
= 25
T
A
= -55
o
C
T
A
= 100
o
C
NORMALIZED TO:
I
F
= 5mA
V
CE
= 5V
T
A
= 25
o
C
NORMALIZED TO:
I
F
= 5mA
V
CE
= 5V
T
A
= 25
o
C
Figure 4. Normalized Collector vs. Collector - Emitter Voltage
V
CE
- COLLECTOR - EMITTER VOLTAGE - V
0.1
1
10
N
O
R
M
A
L
I
Z
E
D

I
C
E

-

C
O
L
L
E
C
T
O
R

-

E
M
I
T
T
E
R

C
U
R
R
E
N
T
0.0001
0.001
0.01
0.1
1
10
NORMALIZED TO:
I
F
= 5mA
V
CE
= 5V
T
A
= 25
o
C
I
F
= 0.2mA
I
F
= 0.5mA
I
F
= 1mA
I
F
= 2mA
I
F
= 5mA
I
F
= 10mA
I
F
= 2mA
I
F
= 5mA
I
F
= 10mA
I
F
= 0.2mA
I
F
= 0.5mA
I
F
= 1mA
PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
Figure 5. Normalized Collector Base Photocurrent Ratio vs. Forward Current
I
F
- FORWARD CURRENT - mA
0
10
20
30
40
50
60
70
80
90
100
N
O
R
M
A
L
I
Z
E
D

I
C
B

-

C
O
L
L
E
C
T
O
R

B
A
S
E

P
H
O
T
O
C
U
R
R
E
N
T
0
5
10
15
20
25
30
Figure 6. Normalized Collector - Base Current vs. Temperature
T
A
- AMBIENT TEMPERATURE -
o
C
-60
-40
-20
0
20
40
60
80
100
N
O
R
M
A
L
I
Z
E
D

C
O
L
L
E
C
T
O
R

-

B
A
S
E

C
U
R
R
E
N
T
0.001
0.01
0.1
1
10
A
NORMALIZED TO:
I
F
= 5mA
V
CB
= 5V
T = 25
o
C
NORMALIZED TO:
I
F
= 5mA
V
CB
= 5V
T
A
= 25
o
C
I
F
= 0.2mA
I
F
= 1mA
I
F
= 0.5mA
I
F
= 2mA
I
F
= 5mA
I
F
= 10mA
Figure 7. Collector-Emitter Dark Current vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
o
C)
0
10
20
30
40
50
60
70
80
90
100
I
C
E
O

-

D
A
R
K

C
U
R
R
E
N
T

(
n
A
)
0.1
1
10
100
1000
10000
I
F
= 0mA
V
CE
= 10V
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
Figure 8. CMOS Input, 3KW, Zero Voltage Switching Solid State Relay
15K
+5V
0.16mA
CMOS
CONTROL
H11AG1
1.5M
75K
47
22K
0.1
C203D
DT230H
(4)
150pF
25A
LOAD
47
SC160B
V130LA20A
120V
60Hz
SUPPLY
2N4256
3V
V
CC
10V
1N148
C
1
AC
INPUT
VOLTAGE
Figure 9. Telephone Ring Detector/A.C. Line CMOS Input Isolator
R
1
4093 or
74HC14
H11AG1
47K
4.7M
C
2
0.1
4.7K
The H11AG1's superior performance at low input currents allows standard CMOS logic circuits to directly operate a 25A solid state relay.
Circuit operation is as follows: power switching is provided by the SC160B, 25A triac. Its gate is controlled by the C203B via the DT230H
rectifier bridge. The C203B turn-on is inhibited by the 2N4256 when line voltage is above 12V and/or the H11AG is off. False trigger and
dv/dt protection are provided by the combination of the MOV
varistor and RC snubber network.
The H11AG1 uses less input power than the neon bulb traditionally used to monitor telephone and line voltages. Additionally. response
time can be tailored to ignore telephone dial tap, switching transients and other undesired signals by modifying the value of C2. The high
impedance to line voltage also can simply board layout spacing requirements.
INPUT
R1
C1
Z
40-90 VRMS
75 K
0.1
F
109K
20 Hz
1/10 W
100 V
95-135 VRMS
180 K
12
F
285K
60 Hz
1/10 W
200 V
200-280 VRMS
390 K
6.80
F
550K
50/60 Hz
1/4 W
400 V
DC component of input voltage is ignored due to C1
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
Lead Coplanarity : 0.004 (0.10) MAX
0.270 (6.86)
0.240 (6.10)
0.350 (8.89)
0.330 (8.38)
0.300 (7.62)
TYP
0.405 (10.30)
MAX
0.315 (8.00)
MIN
0.016 (0.40) MIN
2
5
PIN 1
ID.
0.016 (0.41)
0.008 (0.20)
0.100 (2.54)
TYP
0.022 (0.56)
0.016 (0.41)
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.165 (4.18)
4
3
0.020 (0.51)
MIN
1
6
0.100 (2.54)
TYP
0.020 (0.51)
MIN
0.350 (8.89)
0.330 (8.38)
0.270 (6.86)
0.240 (6.10)
PIN 1
ID.
0.022 (0.56)
0.016 (0.41)
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.135 (3.43)
0.300 (7.62)
TYP
0 to 15
0.154 (3.90)
0.100 (2.54)
SEAT
I
N
G PL
AN
E
0.016 (0.40)
0.008 (0.20)
SEATING PLANE
0.016 (0.40)
0.008 (0.20)
0.070 (1.78)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.154 (3.90)
0.100 (2.54)
0.200 (5.08)
0.135 (3.43)
0.004 (0.10)
MIN
0.270 (6.86)
0.240 (6.10)
0.400 (10.16)
TYP
0 to 15
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
NOTE
All dimensions are in inches (millimeters)
0.070 (1.78)
0.060 (1.52)
0.030 (0.76)
0.100 (2.54)
0.295 (7.49)
0.415 (10.54)
Package Dimensions (Surface Mount)
Package Dimensions (Through Hole)
Package Dimensions (0.4"Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
S
.S
Surface Mount Lead Bend
SD
.SD
Surface Mount; Tape and reel
W
.W
0.4" Lead Spacing
300
.300
VDE 0884
300W
.300W
VDE 0884, 0.4" Lead Spacing
3S
.3S
VDE 0884, Surface Mount
3SD
.3SD
VDE 0884, Surface Mount, Tape & Reel
Option
Order Entry Identifier
Description
4.0 0.1
1.55 0.05
User Direction of Feed
4.0 0.1
1.75 0.10
7.5 0.1
16.0 0.3
12.0 0.1
0.30 0.05
13.2 0.2
4.85 0.20
0.1 MAX
10.30 0.20
9.55 0.20
1.6 0.1
Carrier Tape Specifications ("D" Taping Orientation)
NOTE
All dimensions are millimeters
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE
TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3