2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB114
9
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
* PW
10ms, Duty Cycle
50%
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse test: PW
350
s, duty Cycle
2% Pulsed
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 100
V
V
CEO
Collector-Emitter Voltage
- 100
V
V
EBO
Emitter-Base Voltage
- 8
V
I
C
Collector Current (DC)
- 3
A
I
CP
*Collector Current (Pulse)
- 5
A
P
C
Collector Dissipation (T
a
=25
C)
1.3
W
P
C
Collector Dissipation (T
C
=25
C)
15
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= - 100V, I
E
= 0
- 10
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 2
mA
h
FE1
h
FE2
* DC Current Gain
V
CE
= - 2V, I
C
= - 1.5A
V
CE
= - 2V, I
C
= - 3A
2000
1000
20000
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 1.5A, I
B
= - 1.5mA
- 0.9
- 1.2
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= - 1.5A, I
B
= - 1.5mA
- 1.5
- 2
V
t
ON
Turn ON Time
V
CC
= - 40V, I
C
= - 1.5A
I
B1
= - I
B2
= - 1.5mA
R
L
= 27
0.5
s
t
STG
Storage Time
2
s
t
F
Fall Time
1
s
Classification
O
Y
G
h
FE1
2000 ~ 5000
4000 ~ 12000
6000 ~ 20000
KSB1149
Low Collector Saturation Voltage
Built-in Damper Diode at E-C
High DC Current Gain
High Power Dissipation : P
C
=1.3W (T
a
=25
C)
1
TO-126
1. Emitter 2.Collector 3.Base
2000 Fairchild Semiconductor International
KSB114
9
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
Figure 5. Derating Curve of Safe Operating Areas
Figure 6. Power Derating
-0
-1
-2
-3
-4
-5
-0
-1
-2
-3
-4
-5
I
B
=-
1m
A
I
B
=-900uA
I
B
=-800uA
I
B
=-700uA
I
B
=-600uA
I
B
=-500uA
I
B
=-400uA
I
B
=-300uA
I
B
=-100uA
I
B
=-200uA
Ic
[A], C
O
L
L
ECT
O
R CU
RRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-0.01
-0.1
-1
-10
100
1000
10000
100000
V
CE
= -2V
Pulsed
h
FE
, DC
CURRENT
G
A
IN
I
C
[A], COLLECTOR CURRENT
-0.1
-1
-10
-0.1
-1
-10
-100
Ic = 1000 I
B
Pulsed
V
CE
(sat)
V
BE
(sat)
V
BE
(s
a
t
)
,
V
CE
(
s
at
)[V
], S
A
T
URA
T
ION
V
O
LT
A
G
E
I
C
[A], COLLECTOR CURRENT
-1
-10
-100
500
-0.01
-0.1
-1
-10
100us
300us
Tc=25
o
C
Single Pulse
Ic(DC)
1m
s
Ic(Pulse)
Diss
ipat
ion Li
mite
d
s/b Li
m
ite
d
200m
s
10m
s
I
C
[A
], CO
L
L
E
C
T
O
R CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
25
50
75
100
125
150
175
200
0
20
40
60
80
100
120
140
160
DI
SS
IPA
TIO
N LI
MIT
ED
s/b LI
MITE
D
d
T
[%
], I
c
DE
RA
T
I
NG
T
C
[
o
C], CASE TEMPERATURE
0
25
50
75
100
125
150
175
0
5
10
15
20
P
C
[W
], P
O
W
E
R
D
I
S
S
I
P
A
T
IO
N
T
C
[
o
C], CASE TEMPERATURE
2000 Fairchild Semiconductor International
Rev. E
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Advance Information
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This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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