0.038 (0.97)
0.100 (2.54)
0.050 (1.27)
45
0.046 (1.16)
0.036 (0.92)
1
3
0.030 (0.76)
NOM
0.195 (4.95)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.500 (12.7)
MIN
0.255 (6.47)
0.225 (5.71)
0.020 (0.51) 3X
2
PACKAGE DIMENSIONS
FEATURES
Hermetically sealed package
Narrow reception angle
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The L14G1/L14G2/L14G3 are silicon phototransistors mounted in a narrow angle, TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300307
6/01/01
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1
EMITTER
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
SCHEMATIC
HERMETIC SILICON PHOTOTRANSISTOR
L14G1
L14G2
L14G3
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6/01/01
DS300307
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown
I
C
= 10 mA, Ee = 0
BV
CEO
45
--
V
Emitter-Base Breakdown
I
E
= 100
A, Ee = 0
BV
EBO
5.0
--
V
Collector-Base Breakdown
I
C
= 100
A, Ee = 0
BV
CBO
45
--
V
Collector-Emitter Leakage
V
CE
= 10 V, Ee = 0
I
CEO
--
100
nA
Reception Angle at 1/2 Sensitivity
10
Degrees
On-State Collector Current L14G1
Ee = 0.5 mW/cm
2
, V
CE
= 5 V
(7,8)
I
C(ON)
1.0
--
mA
On-State Collector Current L14G2
Ee = 0.5 mW/cm
2
, V
CE
= 5 V
(7,8
)
I
C(ON)
0.5
mA
On-State Collector Current L14G3
Ee = 0.5 mW/cm
2
, V
CE
= 5 V
(7,8
)
I
C(ON)
2.0
mA
Turn-On Time
I
C
= 2 mA, V
CC
= 10 V, R
L
=100
t
on
8
s
Turn-Off Time
I
C
= 2 mA, V
CC
= 10 V, R
L
=100
t
off
7
s
Saturation Voltage
I
C
= 1.0 mA, E
e
= 3.0 mW/cm
2(7,8)
V
CE(SAT)
--
0.40
V
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C) (All measurements made under pulse conditions)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-65 to +125
C
Storage Temperature
T
STG
-65 to +150
C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec
C
Collector to Emitter Breakdown Voltage
V
CEO
45
V
Collector to Base Breakdown Voltage
V
CBO
45
V
Emitter to Base Breakdwon Voltage
V
EBO
5
V
Power Dissipation (T
A
= 25C)
(1)
P
D
300
mW
Power Dissipation (T
C
= 25C)
(2)
P
D
600
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTE:
1. Derate power dissipation linearly 3.00 mW/C above 25C ambient.
2. Derate power dissipation linearly 6.00 mW/C above 25C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16"
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 3.0 mW/cm
2
is approximately
equivalent to a tungsten source, at 2870K, of 10 mW/cm
2
.
HERMETIC SILICON PHOTOTRANSISTOR
L14G1
L14G2
L14G3
Figure 1. Light Current vs. Collector to Emitter Voltage
.01
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
.01
1
.1
10
.1
1
10
100
I
L
, NORMALIZED LIGHT CURRENT
Figure 3. Normalized Light Current vs. Temperature
0.1
0
1
10
-50
50
I
L
, NORMALIZED LIGHT CURRENT
I
L
, NORMALIZED LIGHT CURRENT
100
150
Figure 2. Light Current vs. Temperature
.01
.1
.1
E
e
- TOTAL IRRADIANCE IN mW/cm
2
1
10
1
I
L
, NORMALIZED LIGHT CURRENT
t
on
and t
off
, NORMALIZED TURN ON AND TURN OFF TIMES
10
100
T
A
, TEMPERATURE (
C)
T
A
, TEMPERATURE (
C)
T
A
, TEMPERATURE (
C)
I
L
, OUTPUT CURRENT (mA)
NORMALIZED TO:
V
CE
= 5 V
Ee = 10 mW/cm
2
T
A
= 25
C
Figure 4. Switching Times vs. Output Current
.01
1
10
.1
1.0
100
10
Ee = 2 mW/cm
2
Ee = 5 mW/cm
2
Ee = 10 mW/cm
2
Ee = 1 mW/cm
2
Ee = 20 mW/cm
2
NORMALIZED TO:
Ee = 10 mW/cm
2
V
CE
= 5 V
NORMALIZED TO:
V
CE
= 5 V
Ee = 10 mW/cm
2
Figure 5. Dark Current and Temperature
10
6
0
1
.1
10
4
10
2
10
5
10
3
10
50
150
75
100
125
I
D
, NORMALIZED DARK CURRENT
25
Figure 6. Normalized Light Current vs. Temperature
Both Emitter (LED 55B) and Detector
(L14G) at Same Temperature
.0
.2
.4
.6
.8
1.0
1.2
1.4
55
15
35
5
25
65
45
105
85
NORMALIZED TO:
LED 55B INPUT = 10 mA
V
CE
= 10 V
I
L
= 100
A
T
A
= 25
C
NORMALIZED TO:
V
CE
= 10 V
IL = 2 mA
I
on
= I
off
= 5
sec
R
L
= 100
R
L
= 1 K
R
L
= 100
R
L
= 10
NORMALIZED TO:
I
D
@ 25
C
V
CEO
= 10 V
LED 55B
L14G
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HERMETIC SILICON PHOTOTRANSISTOR
L14G1
L14G2
L14G3
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300307
6/01/01
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HERMETIC SILICON PHOTOTRANSISTOR
L14G1
L14G2
L14G3
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