PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Pro-
cess 19.
PN2222A
C
B
E
TO-92
PZT2222A
B
C
C
SOT-223
E
MMBT2222A
C
B
E
SOT-23
Mark: 1P
NMT2222
MMPQ2222
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
75
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
1.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
SOT-6
Mark: .1B
C1
E1
C2
B1
E2
B2
1997 Fairchild Semiconductor Corporation
SOIC-16
C1
C1
C2
C2
C3
C3
C4
C4
E1
B1
E2
B2
E3
B3
E4
B4
pin #1
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
(except MMPQ2222 and NMT2222)
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz
300
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 100 kHz
8.0
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, f = 100 kHz
25
pF
rb'C
C
Collector Base Time Constant
I
C
= 20 mA, V
CB
= 20 V, f = 31.8 MHz
150
pS
NF
Noise Figure
I
C
= 100
A, V
CE
= 10 V,
R
S
= 1.0 k
, f = 1.0 kHz
4.0
dB
Re(h
ie
)
Real Part of Common-Emitter
High Frequency Input Impedance
I
C
= 20 mA, V
CE
= 20 V, f = 300 MHz
60
SWITCHING CHARACTERISTICS
(except MMPQ2222 and NMT2222)
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Spice Model
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 10 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
75
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
CEX
Collector Cutoff Current
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
10
nA
I
CBO
Collector Cutoff Current
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 150
C
0.01
10
A
A
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
10
nA
I
BL
Base Cutoff Current
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
20
nA
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V, T
A
= -55
C
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 150 mA, V
CE
= 1.0 V*
I
C
= 500 mA, V
CE
= 10 V*
35
50
75
35
100
50
40
300
V
CE(
sat
)
Collector-Emitter Saturation
Voltage*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.3
1.0
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.6
1.2
2.0
V
V
t
d
Delay Time
V
CC
= 30 V, V
BE(OFF)
= 0.5 V,
10
ns
t
r
Rise Time
I
C
= 150 mA, I
B1
= 15 mA
25
ns
t
s
Storage Time
V
CC
= 30 V, I
C
= 150 mA,
225
ns
t
f
Fall Time
I
B1
= I
B2
= 15 mA
60
ns
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
NPN General Purpose Amplifier
(continued)
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2222A
*PZT2222A
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
1,000
8.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
125
C/W
Symbol
Characteristic
Max
Units
**MMBT2222A
MMPQ2222
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
1,000
8.0
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357
125
240
C/W
C/W
C/W
Typical Characteristics
NPN General Purpose Amplifier
(continued)
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
**
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
SE-
EMI
TTER
ON VOL
T
A
GE (
V
)
BE
(
O
N)
C
V = 5V
CE
25 C
125 C
- 40 C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
- BA
SE-EM
I
T
TER V
O
L
T
A
G
E
(V)
BE
SA
T
C
= 10
25 C
125 C
- 40 C
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V
-
COLL
ECT
O
R
-
EMI
T
TER VOL
T
A
G
E
(
V
)
CES
A
T
25 C
C
= 10
125 C
- 40 C
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TYPI
C
A
L P
U
LS
ED CU
RRENT
GA
I
N
C
FE
125 C
25 C
- 40 C
V = 5V
CE
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
- COLL
ECT
O
R CURRE
NT (nA
)
A
V
= 40V
CB
CB
O
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
0.1
1
10
100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CA
P
A
CI
T
A
N
C
E (
p
F
)
f = 1 MHz
C ob
C te
Turn On and Turn Off Times
vs Collector Current
10
100
1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
S)
I = I =
t on
t
off
B1
C
B2
I
c
10
V = 25 V
cc
Switching Times
vs Collector Current
10
100
1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TI
ME
(
n
S
)
I = I =
t r
t
s
B1
C
B2
I
c
10
V = 25 V
cc
t f
t d
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R DIS
S
I
P
A
T
I
O
N (W
)
D
o
SOT-223
TO-92
SOT-23
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
Test Circuits
30 V
1.0 K
16 V
0
200ns
200ns
500
200
50
37
- 15 V
1.0 K
6.0 V
0
30 V
FIGURE 2: Saturated Turn-Off Switching Time
FIGURE 1: Saturated Turn-On Switching Time
1k
NPN General Purpose Amplifier
(continued)
TRADEMARKS
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
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Formative or
In Design
First Production
Full Production
Not In Production
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