Document Outline
- Main Menu
- Discrete Product Families
- MOSFETs
- Back
- Search
- fairchildsemi.com
2002 Fairchild Semiconductor Corporation
February 2002
Rev. B, February 2002
ISL9N316AD3ST
ISL9N316AD3ST
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.014
(Typ), V
GS
= 10V
r
DS(ON)
= 0.020
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 13nC, V
GS
= 5V
Q
gd
(Typ) = 4.5nC
C
ISS
(Typ) = 1450pF
MOSFET Maximum Ratings
T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
30
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
48
A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
28
A
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
JA
= 52
o
C/W)
10
A
Pulsed
Figure 4
A
P
D
Power dissipation
Derate above 25
o
C
65
0.43
W
W/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
R
JC
Thermal Resistance Junction to Case TO-252
2.31
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-252
100
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
52
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
N316AD
ISL9N316AD3ST
TO-252AA
330mm
16mm
2500 units
GATE
SOURCE
DRAIN (FLANGE)
D
G
S
TO-252
2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
ISL9N316AD3ST
Electrical Characteristics
T
A
= 25C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 4.5V)
Switching Characteristics
(V
GS
= 10V)
Unclamped Inductive Switching
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
30
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 25V
-
-
1
A
V
GS
= 0V
T
C
= 150
o
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
=
20V
-
-
100
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1
-
3
V
r
DS(ON)
Drain to Source On Resistance
I
D
= 48A, V
GS
= 10V
-
0.014
0.0155
I
D
= 28A, V
GS
= 4.5V
-
0.020
0.023
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
1450
-
pF
C
OSS
Output Capacitance
-
300
-
pF
C
RSS
Reverse Transfer Capacitance
-
120
-
pF
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V
V
DD
= 15V
I
D
= 28A
I
g
= 1.0mA
-
25
38
nC
Q
g(5)
Total Gate Charge at 5V
V
GS
= 0V to 5V
-
13
20
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 1V
-
1.5
2.3
nC
Q
gs
Gate to Source Gate Charge
-
4.3
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
4.5
-
nC
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 10A
V
GS
= 4.5V, R
GS
= 11
-
-
115
ns
t
d(ON)
Turn-On Delay Time
-
15
-
ns
t
r
Rise Time
-
60
-
ns
t
d(OFF)
Turn-Off Delay Time
-
25
-
ns
t
f
Fall Time
-
30
-
ns
t
OFF
Turn-Off Time
-
-
83
ns
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 10A
V
GS
= 10V, R
GS
= 11
-
-
57
ns
t
d(ON)
Turn-On Delay Time
-
8
-
ns
t
r
Rise Time
-
30
-
ns
t
d(OFF)
Turn-Off Delay Time
-
45
-
ns
t
f
Fall Time
-
30
-
ns
t
OFF
Turn-Off Time
-
-
115
ns
t
AV
Avalanche Time
I
D
= 2.9A, L = 3.0mH
195
-
-
s
V
SD
Source to Drain Diode Voltage
I
SD
= 28A
-
-
1.25
V
I
SD
= 13A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 28A, dI
SD
/dt = 100A/
s
-
-
20
ns
Q
RR
Reverse Recovered Charge
I
SD
= 28A, dI
SD
/dt = 100A/
s
-
-
7
nC
2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
ISL9N316AD3ST
Typical Characteristic
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
O
W
E
R DIS
S
IP
A
T
ION MUL
T
IP
L
I
E
R
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
I
D
,
D
RAIN CURRENT
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
0
20
40
60
25
50
75
100
125
150
175
V
GS
= 4.5V
V
GS
= 10V
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
JC
, NORM
AL
I
Z
ED
TH
ERM
A
L I
M
PED
AN
CE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
40
I
DM
, PEA
K CURRENT
(
A
)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
V
GS
= 5V
2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
ISL9N316AD3ST
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic
(Continued)
0
20
40
60
80
100
4
5
6
1
I
D
, DRAIN CURRE
NT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
3
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= -55
o
C
T
J
= 175
o
C
T
J
= 25
o
C
0
20
60
80
100
0
0.5
1.0
1.5
2.0
40
I
D
, DRAIN CURRENT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4.5V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.0V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 3V
I
D
= 10A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 48A
r
DS(
O
N)
, DRAIN T
O
SOURCE
ON RES
I
ST
ANCE
(
m
)
20
30
40
2
4
6
8
10
10
I
D
= 28A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
NORM
A
L
IZ
ED DRAIN T
O
S
O
U
RCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RES
I
S
T
ANCE
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
200
V
GS
= 10V, I
D
= 48A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
NORM
AL
IZ
ED GA
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
T
HRES
H
OL
D V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
NORM
AL
I
Z
ED DRA
I
N
T
O
SOURCE
BREAK
DO
WN V
O
L
T
A
G
E
0.9
1.0
1.1
-80
-40
0
40
80
120
160
200
1.2
I
D
= 250
A
2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
ISL9N316AD3ST
Figure 11. Capacitance vs Drain to Source
Voltage
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Typical Characteristic
(Continued)
2000
C, CAP
A
C
IT
ANCE (
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
1000
0.1
1
10
C
ISS
= C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
= C
GD
V
GS
= 0V, f = 1MHz
30
0
2
4
6
8
10
0
10
20
30
V
GS
, GA
T
E
T
O
SOURCE V
O
L
T
A
GE (
V
)
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 28A
I
D
= 10A
WAVEFORMS IN
DESCENDING ORDER:
0
50
100
150
0
10
20
30
40
50
SWIT
CHING T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 10A
t
r
t
d(ON)
t
d(OFF)
t
f
0
50
100
150
0
10
20
30
40
50
S
W
IT
CHING T
I
M
E
(
n
s
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 10A
t
d(OFF)
t
d(ON)
t
f
t
r
200
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
PDF 
ZIP