March 1996
NDS351N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
NDS351N
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage - Continuous
20
V
I
D
Maximum Drain Current - Continuous
(Note 1a)
1.1
A
- Pulsed
10
P
D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
75
C/W
NDS351N Rev. E2
1.1A, 30V. R
DS(ON)
= 0.25
@ V
GS
= 4.5V.
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
D
S
G
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMCIA cards, and other
battery powered circuits where fast switching, and low
in-line power loss are needed in a very small outline
surface mount package.
1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
A
T
J
=125C
10
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 12 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -12 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
0.8
1.6
2
V
T
J
=125C
0.5
1.3
1.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 1.1 A
0.185
0.25
T
J
=125C
0.26
0.37
V
GS
= 10 V, I
D
= 1.4 A
0.135
0.16
I
D(ON)
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
5
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 1.1 A
2.5
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
140
pF
C
oss
Output Capacitance
80
pF
C
rss
Reverse Transfer Capacitance
18
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
d(on)
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 50
9
15
ns
t
r
Turn - On Rise Time
16
30
ns
t
d(off)
Turn - Off Delay Time
26
50
ns
t
f
Turn - Off Fall Time
19
40
ns
Q
g
Total Gate Charge
V
DS
= 10 V, I
D
= 1.1 A,
V
GS
= 5 V
2
3.5
nC
Q
gs
Gate-Source Charge
1
nC
Q
gd
Gate-Drain Charge
2
nC
NDS351N Rev. E2
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
0.6
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
5
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.1 A
(Note 2)
0.8
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
-
T
A
R
J A
(
t
)
=
T
J
-
T
A
R
J C
+
R
CA
(
t
)
=
I
D
2
(
t
)
R
DS
(
ON
)
T
J
Typical R
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
b. 270
o
C/W when mounted on a 0.001 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDS351N Rev. E2
1 a
1b
NDS351N Rev. E2
0
1
2
3
4
0
2
4
6
8
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 10V
GS
DS
D
2.5
6.0 5.0
4.5
4.0
3.0
3.5
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V = 4.5V
GS
I = 1.1A
D
R , NORMALIZED
DS(ON)
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (C)
GATE-SOURCE THRESHOLD VOLTAGE
I = -250A
D
V = V
DS
GS
J
V , NORMALIZED
th
0
2
4
6
8
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V = 3.0V
GS
10
4.0
6.0
5.0
4.5
3.5
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
1
2
3
4
5
0
1
2
3
4
5
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55C
J
25
125C
0
2
4
6
8
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
T = 125C
J
25C
-55C
D
V = 4.5 V
GS
R , NORMALIZED
DS(on)
NDS351N Rev. E2
-50
-25
0
25
50
75
100
125
150
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I = 250A
D
BV , NORMALIZED
DSS
J
0.3
0.6
0.9
1.2
0.001
0.01
0.1
0.2
0.5
1
2
5
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
25C
-55C
T = 125C
J
V = 0V
GS
SD
S
0
1
2
3
4
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 1.1A
DS
V = 5V
DS
10V
0.1
0.2
0.5
1
2
5
10
2 0
30
1 0
2 0
3 0
5 0
1 0 0
2 0 0
3 0 0
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
Typical Electrical Characteristics
(continued)
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