www.docs.chipfind.ru
May 1998
NDS9955
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
NDS9955
Units
V
DSS
Drain-Source Voltage
50
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current - Continuous
(Note 1a)
3
A
- Pulsed
10
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
NDS9955 Rev.A
3.0 A, 50 V. R
DS(ON)
= 0.130
@ V
GS
= 10 V,
R
DS(ON)
= 0.200
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These
devices are particularly suited for low voltage applications
such as disk drive motor control, battery powered circuits
where fast switching, low in-line power loss, and resistance
to transients are needed.
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
NDS
9955
pin
1
1
5
7
8
2
3
4
6
1998 Fairchild Semiconductor Corporation
Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
50
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
60
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 40 V, V
GS
= 0 V
2
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.7
3
V
T
J
=125C
0.7
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 3 A
0.076
0.13
T
J
=125C
0.124
0.2
V
GS
= 4.5 V, I
D
= 1.5 A
0.103
0.2
T
J
=125C
0.166
0.3
I
D(ON)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
10
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
5.3
S
DYNAMIC CH ARACTERISTICS
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
345
pF
C
oss
Output Capacitance
110
pF
C
rss
Reverse Transfer Capacitance
25
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DS
= 25 V, I
D
= 1 A
5
20
ns
t
r
Turn - On Rise Time
V
GS
= 10 V , R
GEN
= 6
7.5
20
t
D(off)
Turn - Off Delay Time
20
70
t
f
Turn - Off Fall Time
7
5
Q
g
Total Gate Charge
V
DS
= 25 V, I
D
= 2 A,
12.9
30
nC
Q
gs
Gate-Source Charge
V
GS
= 10 V
1.7
Q
gd
Gate-Drain Charge
3.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.8
1.2
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 1.3 A,
dI
F
/dt = 100 A/s
40
ns
I
rr
Reverse Recovery Current
1.5
A
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDS9955 Rev.A
c. 135
O
C/W on a 0.003 in
2
pad of 2oz copper.
b. 125
O
C/W on a 0.02 in
2
pad of 2oz copper.
a. 78
O
C/W on a 0.5 in
2
pad of 2oz copper.
NDS9955 Rev.A
0
1
2
3
4
5
0
5
10
15
20
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
DS
D
3.5V
3.0V
4.0V
V = 10V
GS
6.0V
4.5V
5.0V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 3.0A
D
Figure 3. On-Resistance Variation With
Temperature.
1
1.5
2
2.5
3
3.5
4
4.5
5
0
2
4
6
8
10
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 5V
DS
GS
D
T = -55C
J
125C
25C
Figure 5 . Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
2
4
6
8
10
0
0.1
0.2
0.3
0.4
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
I = 2A
D
T =125C
A
T =25C
A
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
0.75
1
1.25
1.5
1.75
2
2.25
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.0V
GS
D
R , NORMALIZED
DS(ON)
10V
4.5 V
6.0V
5.0V
4.0 V
3.5 V
0.4
0.6
0.8
1
1.2
0.1
0.2
0.3
0.5
1
2
3
5
10
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
25C
-55C
V = 0V
GS
SD
S
T = 125C
J
NDS9955 Rev.A
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical Characteristics
(continued)
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R =135 C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient
thermal response will change depending on the circuit board design.
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 3A
D
0.1
0.3
1
3
10
20
50
10
20
50
100
200
400
1000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
0.1
0.2
0.5
1
2
5
10
20
50
100
0.01
0.03
0.1
0.3
1
3
10
30
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
A
DC
DS
1s
100ms
10ms
1ms
10s
V =10V
SINGLE PULSE
R = 135C/W
T = 25C
JA
GS
A
100us
0.001
0.01
0.1
1
10
100
300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =135C/W
T = 25C
JA
A
SOIC(8lds) Packaging
Configuration: Figure 1.0
Components
Leader Tape
1680mm minimum or
210 empty pockets
Trailer Tape
640mm minimum or
80 empty pockets
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOIC (8lds) Packaging Information
Standard
(no flow code)
L86Z
F011
Packaging type
Reel Size
TNR
13" Dia
Rail/Tube
-
TNR
13" Dia
Qty per Reel/Tube/Bag
2,500
95
4,000
Box Dimension (mm)
343x64x343
530x130x83
343x64x343
Max qty per Box
5,000
30,000
8,000
D84Z
TNR
7" Dia
500
184x187x47
1,000
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
0.1182
F63TN Label
ESD Label
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
LOT: CBVK741B019
FSID: FDS9953A
D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 2500
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
F852
NDS
9959
SOIC-8 Unit Orientation
F
85
2
NDS
99
59
Pin 1
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Antistatic Cover Tape
ESD Label
EL ECT RO ST AT IC
SEN SIT IVE DEVI CES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Customized
Label
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
F
85
2
NDS
99
59
F
85
2
NDS
99
59
F
85
2
NDS
99
59
SO-8 Tape and Reel Data and Package Dimensions
July 1999, Rev. B
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