TN6714A / NZT6714
TN6714A
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.5 A.
Sourced from Process 37.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
2.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
NZT6714
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
TN6714A
*NZT6714
P
D
Total Device Dissipation
Derate above 25
C
1.0
8.0
1.0
8.0
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
50
C/W
R
JA
Thermal Resistance, Junction to Ambient
125
125
C/W
B
C
C
SOT-223
E
TO-226
C
B
E
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
TN6714A / NZT6714
Electrical Characteristics
TA= 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 1.0 A, V
CE
= 1.0 V
55
60
50
250
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 100 mA
0.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 1.0 A, V
CE
= 1.0 V
1.2
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 10 mA, I
B
= 0
30
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
5.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 40 V, I
E
= 0
0.1
A
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
0.1
A
SMALL SIGNAL CHARACTERISTICS
h
fe
Small-Signal Current Gain
I
C
= 50 mA, V
CE
= 10 V,
f = 20 MHz
2.5
25
C
cb
Collector-Base Capacitance
V
CB
= 10 mA, I
E
= 0, f = 1.0 MHz
30
pF
*
Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
1
0
100
200
300
400
500
I - COLLECTOR CURRENT (A)
h
-
TY
P
I
C
A
L
P
U
LS
E
D
C
U
R
R
E
N
T G
A
I
N
FE
- 40 C
25 C
C
V = 5V
CE
125 C
NPN General Purpose Amplifier
(continued)
Collector-Emitter Saturation
Voltage vs Collector Current
P 3
0.01
0.1
1
0.01
0.1
1
I - COLLECTOR CURRENT (A)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
CE
S
A
T
C
= 10
125 C
- 40 C
25 C
TN6714A / NZT6714
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Base-Emitter ON Voltage vs
Collector Current
P 3
1
10
100
1000
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
IT
T
E
R
O
N
VO
L
T
A
G
E (
V
)
B
E(ON
)
125 C
- 40 C
25 C
C
V = 5V
CE
Base-Emitter Saturation
Voltage vs Collector Current
P 3
0.01
0.1
1
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V
-
B
A
SE-
EM
I
T
T
E
R
VO
L
T
A
G
E (
V
)
B
ESA
T
C
= 10
125 C
- 40 C
25 C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
CO
L
L
E
CT
O
R
CUR
RE
N
T
(
n
A
)
A
V = 20V
CB
CBO
Safe Operating Area TO-226
P 3
1
10
100
0.01
0.1
1
10
V - COLLECTOR-EMITTER VOLTAGE (V)
I
- CO
L
L
E
CT
O
R
CU
RRE
NT
(A)
CE
C
*PULSED
OPERATION
T = 25 C
A
LIMIT DETERMINED
BY BV
CEO
DC T
=
25
C
CO
LLE
CT
OR L
EAD
DC T
=
25
C
AM
BIEN
T
100
S*
10
S*
1.
0 m
s*
Collector-Base Capacitance
vs Collector-Base Voltage
Pr 37
0
4
8
12
16
20
24
28
0
10
20
30
40
V - COLLECTOR-BASE VOLTAGE (V)
C
-
CO
L
L
E
CT
O
R
-
B
A
S
E
C
A
P
A
C
I
T
A
NCE
(p
F
)
C B
OB
O
Gain Bandwidth Product
vs Collector Current
1
10
100
1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
- G
A
I
N
BAND
W
I
D
T
H
P
R
O
D
U
C
T
(M
H
z
)
C
FE
V = 10V
CE
TN6714A / NZT6714
Typical Characteristics
(continued)
NPN General Purpose Amplifier
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
PO
W
E
R
D
I
SS
IPA
T
I
O
N
(
W
)
D
o
TO-226
SOT-223
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