PN200 / MMBT200 / PN200A / MMBT200A PNP General Purpose Amplifier
PN200
PN200A
MMBT200
MMBT200A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
45
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
PN200
PN200A
*MMBT200
*MMBT200A
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
SOT-23
Mark: N2 / N2A
C
B
E
TO-92
C
B
E
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PN200 / MMBT200 / PN200A / MMBT200A
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
B
= 0
60
V
BV
CEO
Collector-Emitter Breakdown Voltage*
I
C
= 1.0 mA, I
E
= 0
45
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
CBO
Collector Cutoff Current
V
CB
= 50 V, I
E
= 0
50
nA
I
CES
Collector Cutoff Current
V
CE
= 40 V, I
E
= 10
50
nA
I
EBO
Emitter Cutoff Current
V
EB
= 4.0 V, I
C
= 0
50
nA
f
T
Current Gain - Bandwidth Product
V
CE
= 20 V, I
C
= 20 mA
250
MHz
C
obo
Output Capacitance
V
CB
= 10 V, f = 1.0 MHz
6.0
pF
NF
Noise Figure
I
C
= 100
A, V
CE
= 5.0 V,
R
G
= 2.0 k
, f = 1.0 kHz
4.0
dB
dB
h
FE
DC Current Gain
I
C
= 100
A, V
CE
= 1.0 V
200
200A
I
C
= 10 mA, V
CE
= 1.0 V
200
200A
I
C
= 100 mA, V
CE
= 1.0 V*
200A
I
C
= 150 mA, V
CE
= 5.0 V*
200
200A
80
240
100
300
100
100
100
450
600
350
V
CE(
sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 200 mA, I
B
= 20 mA*
0.2
0.4
V
V
V
BE(
sat)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 200 mA, I
B
= 20 mA*
0.85
1.0
V
V
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.01
0.1
1
10
100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
T
Y
PI
CAL
P
U
L
S
E
D
C
URRE
NT
GAI
N
C
FE
125 C
25 C
- 40 C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collect or Current
0.1
1
10
100
300
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRE NT (mA)
V
-
C
O
L
L
EC
T
O
R
EM
I
T
T
E
R
VO
L
T
A
G
E
(
V
)
C
CE
S
A
T
25
C
- 40
C
125
C
= 10
PNP General Purpose Amplifier
(continued)
PN200 / MMBT200 / PN200A / MMBT200A
Typical Characteristics
(continued)
PNP General Purpose Amplifier
(continued)
Collector Saturation Region
100
300
700
2000 4000
0
1
2
3
4
I - BASE CURRENT (uA)
V
-
C
O
LLEC
T
O
R
-
E
M
I
TT
ER
VO
L
T
A
G
E
(
V
)
CE
B
50 mA
300 mA
100 uA
Ta = 25C
Ic =
CE
R
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
0.1
1
10
100
1000
70
75
80
85
90
95
RESISTANCE (k )
BV
-
BRE
A
K
DOW
N
V
O
L
T
AG
E
(
V
)
PN200 / MMBT200 / PN200A / MMBT200A
Input and Output Capacitance
vs Reverse Voltage
0.1
1
10
100
10
100
V - COLLECTOR VOLTAGE (V)
CA
P
A
CI
T
ANC
E
(
p
F
)
Cib
Cob
f = 1.0 MHz
CE
Collector-Cutoff Curre nt
vs Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
L
L
E
C
T
O
R
CU
RR
E
N
T
(
n
A)
A
CB
O
V = 50V
CB
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
300
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
C
BE
S
A
T
= 10
25
C
- 40
C
125
C
Base Emitter ON Voltage vs
Collector Current
0.1
1
10
100 200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
O
N
V = 5V
CE
25
C
- 40
C
125
C
Typical Characteristics
(continued)
Switching Times vs
Collector Current
10
20
30
50
100
200
300
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
TI
M
E
(nS)
IB1 = IB2 = Ic / 10
V = 10 V
C
cc
t
s
t
d
t
f
t
r
Gain Bandwidth Product
vs Collector Current
1
10
20
50
100 150
0
10
20
30
40
I - COLLECTOR CURRENT (mA)
f
-
GA
I
N
BA
ND
W
I
D
T
H P
R
O
D
U
C
T
(
M
H
z
)
C
T
V = 5V
ce
Power Dissip atio n vs
Ambient Temperature
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
TEMPER ATURE ( C)
P
-
P
O
W
E
R DI
S
S
I
P
AT
I
O
N (
m
W
)
D
TO-92
SOT-23
PNP General Purpose Amplifier
(continued)
PN200 / MMBT200 / PN200A / MMBT200A
TO-92 Tape and Reel Data
March 2001, Rev. B1
2001 Fairchild Semiconductor Corporation
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130mm x
83mm
Intermediate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102mm x 51mm
Immediate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE
DESCRIPTION
LEADCLIP
DIMENSION
QUANTITY
J18Z
TO-18 OPTION STD
NO LEAD CLIP
2.0 K / BOX
J05Z
TO-5 OPTION STD
NO LEAD CLIP
1.5 K / BOX
NO EOL
CODE
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
NO LEADCLIP
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267mm x 375mm
Intermediate Box
FSCINT
Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Style
Quantity
EOL code
Reel
A
2,000
D26Z
E
2,000
D27Z
Ammo
M
2,000
D74Z
P
2,000
D75Z
Unit weight = 0.22 gm
Reel weight with components = 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
F63TNR
Label
5 Ammo boxes per
Intermediate Box
Customized
Label
327mm x 158mm x 135mm
Immediate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Intermediate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 2000
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
94 (NON PROELECTRON
SERIES), 96
L34Z
TO-92 STANDARD
STRAIGHT FOR: PKG 94
NO LEADCLIP
2.0 K / BOX
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
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