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Электронный компонент: RFP14N05L

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2002 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B
RFD14N05L, RFD14N05LSM, RFP14N05L
14A, 50V, 0.100 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. This performance is accomplished
through a special gate oxide design which provides full rated
conductance at gate bias in the 3V-5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA09870.
Features
14A, 50V
r
DS(ON)
= 0.100
Temperature Compensating PSPICE
Model
Can be Driven Directly from CMOS, NMOS, and
TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD14N05L
TO-251AA
14N05L
RFD14N05LSM
TO-252AA
14N05L
RFP14N05L
TO-220AB
FP14N05L
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A.
G
D
S
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
January 2002
background image
2002 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD14N05L, RFD14N05LSM,
RFP14N05L
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
50
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
50
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
10
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
14
Refer to Peak Current Curve
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
48
0.32
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V, Figure 13
50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A, Figure12
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40V, V
GS
= 0V
-
-
1
A
V
DS
= 40V, V
GS
= 0V, T
C
= 150
o
C
-
-
50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
10V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 14A, V
GS
= 5V, Figures 9, 11
-
-
0.100
Turn-On Time
t
(ON)
V
DD
= 25V, I
D
= 7A,
R
L
= 3.57
, V
GS
= 5V,
R
GS
= 0.6
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
13
-
ns
Rise Time
t
r
-
24
-
ns
Turn-Off Delay Time
t
d(OFF)
-
42
-
ns
Fall Time
t
f
-
16
-
ns
Turn-Off Time
t
(OFF)
-
-
100
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 40V, I
D
= 14A,
R
L
= 2.86
Figures 20, 21
-
-
40
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
-
25
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
-
1.5
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Figure 14
-
670
-
pF
Output Capacitance
C
OSS
-
185
-
pF
Reverse Transfer Capacitance
C
RSS
-
50
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
3.125
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-251 and TO-252
-
-
100
o
C/W
R
JA
TO-220
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 14A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 14A, dI
SD
/dt = 100A/
s
-
-
125
ns
NOTES:
2. Pulse Test: Pulse Width
300ms, Duty Cycle
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFD14N05L, RFD14N05LSM, RFP14N05L
background image
2002 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
0.2
0.4
0.6
0.8
1.0
1.2
8
4
0
25
50
75
100
125
150
12
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
16
175
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
-5
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
10
-4
2
THERMAL IMPED
ANCE
Z
JC
,
NORMALIZED
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
1
100
10
1
I
D
,
DRAIN CURRENT (A)
DC
100
s
100ms
1ms
10ms
0.5
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
C
= 25
o
C
T
J
= MAX. RATED
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 10V
100
I
DM
,
PEAK CURRENT CAP
ABILITY (A)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 5V
200
T
C
= 25
o
C
RFD14N05L, RFD14N05LSM, RFP14N05L
background image
2002 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0.1
1
10
10
0.01
50
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
I
AS
,
A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
5
10
15
0
1.5
3.0
4.5
7.5
20
25
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4V
V
GS
= 10V
30
35
6.0
V
GS
= 3V
V
GS
= 2.5V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 80
s, T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX.
0
3.0
4.5
6.0
7.5
1.5
0
5
10
15
20
25
175
o
C
I
DS(ON)
,
DRAIN
T
O
SOURCE CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
30
35
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX.
V
DD
= 15V
0
50
100
150
200
2.5
3.0
3.5
4.0
4.5
r
DS(ON)
,
DRAIN
T
O
SOURCE
V
GS
, GATE TO SOURCE VOLTAGE (V)
5.0
250
I
D
= 28A
I
D
= 7A
I
D
= 3.5A
I
D
= 14A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX.
ON RESIST
ANCE (m
)
0
20
0
10
20
30
40
SWITCHING TIME
(ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
40
60
80
100
120
140
160
t
d(OFF)
t
r
t
f
t
d(ON)
V
DD
= 25V, I
D
= 14A, R
L
= 3.57
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORMALIZED DRAIN
T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2.5
PULSE DURATION = 80
s
ON RESIST
ANCE
V
GS
= 10V, I
D
= 14A
DUTY CYCLE = 0.5% MAX.
RFD14N05L, RFD14N05LSM, RFP14N05L
background image
2002 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260,
FIGURE 15. TRANSCONDUCTANCE vs DRAIN CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN
T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
200
I
D
= 250
A
800
200
0
0
5
10
15
20
25
C,
CAP
A
CIT
ANCE (pF)
400
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
600
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
40
30
20
10
0
20
I
G REF
(
)
I
G ACT
(
)
-------------------------
t, TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
-------------------------
5
3
2
1
0
V
DD
= BV
DSS
V
DD
= BV
DSS
V
DS
,
DRAIN
T
O
SOURCE
V
O
L
T
A
GE (V)
V
GS
,
GA
TE
T
O
SOURCE
V
O
L
T
A
GE (V)
R
L
= 3.57
I
G(REF)
= 0.4mA
V
GS
= 5V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
50
4
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFD14N05L, RFD14N05LSM, RFP14N05L