RGP10A-RGP10M
RPG10A - RPG10M, Rev. A
RGP10A - RGP10M
1.0 Ampere Glass Passivated Fast Recovery Rectifiers
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
L
= 55
C
1.0
A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
30
A
P
D
Total Device Dissipation
Derate above 25
C
2.5
17
W
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
50
C/W
T
stg
Storage Temperature Range
-65 to +175
C
T
J
Operating Junction Temperature
-65 to +175
C
1999 Fairchild Semiconductor Corporation
Features
1.0 ampere operation at T
A
= 55C
with no thermal runaway.
High temperature metallurgically
bonded construction.
Glass passivated cavity-free junction.
Typical I
R
less than 1
A.
Fast switching for high efficiency.
Parameter
Device
Units
10A
10B
10D
10G
10J
10K
10M
Peak Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
35
70
140
280
420
560
700
V
DC Reverse Voltage (Rated V
R
)
50
100
200
400
600
800
1000
V
Maximum Reverse Current
@ rated V
R
T
A
= 25
C
T
A
= 150
C
5.0
200
A
A
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
150
250
500
nS
Maximum Forward Voltage @ 1.0 A
1.3
V
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
15
pF
DO-41
COLOR BAND DENOTES CATHODE
1.0 min
(25.4)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
0.205 (5.21)
0.160 (4.06)
Dimensions in
inches (mm)
Discrete POWER & Signal
Technologies
RGP10A-RGP10M
RPG10A - RPG10M, Rev. A
Typical Characteristics
Non-Repetitive Surge Current
1
2
5
10
20
50
100
0
5
10
15
20
25
30
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
RD
S
U
RG
E
C
U
RR
E
N
T
(
A
)
Forward Characteristics
0.4
0.6
0.8
1
1.2
1.4
1.6
0.01
0.1
1
10
FORWARD VOLTAGE (V)
F
O
R
W
AR
D
CU
RR
ENT
(
A
)
Pulse Width = 300
s
2% Duty Cycle
T = 25 C
A
Junction Capacitance
1
2
5
10
20
50
100
1
2
5
10
20
50
100
REVERSE VOLTAGE (V)
CA
P
A
CI
T
A
N
C
E
(
p
F
)
P u l s e
G e n e r a t o r
(Note 2)
50
N O N I N D U C T I V E
50
N O N I N D U C T I V E
D U T
(-)
(+)
O S C I L L O S C O P E
(Note 1)
50
N O N I N D U C T I V E
5 0 V
(approx)
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
Reverse Characteristics
0
20
40
60
80
100
120
140
0.01
0.1
1
10
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
R
EVER
S
E
C
U
R
R
EN
T (
A
)
T = 25 C
A
T = 75 C
A
T = 125 C
A
Forward Current Derating Curve
25
50
75
100
125
150
175
0
0.25
0.5
0.75
1
LEAD TEMPERATURE ( C)
FO
RW
AR
D CU
RRE
NT
(
A
)
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
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