SS22-S210
SS22-S210, Rev. A
SS22 - S210
2.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
T
A
= 25C unless otherwise noted
1998 Fairchild Semiconductor Corporation
Features
Glass passivated junctions.
High current capability, low V
F
.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
A
= 75
C
2.0
A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
50
A
P
D
Total Device Dissipation
Derate above 25
C
1.3
13
W
mW/
C
R
JA
Thermal Resistance, Junction to Ambient **
75
C/W
T
stg
Storage Temperature Range
-65 to +150
C
T
J
Operating Junction Temperature
-65 to +125
C
Parameter
Device
Units
22
23
24
25
26
28
29
210
Peak Repetitive Reverse Voltage
20
30
40
50
60
80
90
100
V
Maximum RMS Voltage
14
21
28
35
42
56
64
80
V
DC Reverse Voltage (Rated V
R
)
20
30
40
50
60
80
90
100
V
Maximum Reverse Current T
A
= 25
C
(Note 1)
@ rated V
R
T
A
= 100
C
0.4
10
mA
mA
Maximum Forward Voltage @ 2.0 A
500
700
850
mV
Note: Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
2
1
0.220 (5.588)
0.200 (5.080)
0.185 (4.699)
0.160 (4.064)
0.096 (2.438)
0.083 (2.108)
0.155 (3.937)
0.130 (3.302)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
0.050 (1.270)
0.030 (0.762)
0.083 (2.108)
0.075 (1.905
)
Discrete POWER & Signal
Technologies
SS22-S210
SS22-S210, Rev. A
Schottky Barrier Rectifiers
(continued)
Typical Characteristics
Forward Current Derating Curve
50
60
70
80
90
100 110 120 130 140 150
0
0.5
1
1.5
2
LEAD TEMPERATURE ( C)
FO
RW
AR
D CU
RRE
NT
(
A
)
SINGLE PHASE
HALF WAVE
60Hz
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 8.0x8.0mm
COPPER PAD AREAS
Non-Repetitive Surge Current
1
2
5
10
20
50
100
0
10
20
30
40
50
60
NUMBER OF CYCLES AT 60Hz
F
O
R
W
A
R
D
S
URG
E
CU
RR
EN
T
(
A
)
8.3ms Single Half Sine-Wave
JEDEC Method
Junction Capacitance
0.1
0.5
1
5
10
20
50 100
10
20
50
100
200
500
REVERSE VOLTAGE (V)
C
A
PA
C
I
TA
N
C
E (
p
F
)
f = 1.0 MHz
Vsig = 50mVp-p
T = 25 C
A
SS22-24
SS25-S210
Forward Characteristics
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0.1
1
5
10
20
50
FORWARD VOLTAGE (V)
F
O
R
W
AR
D C
U
R
R
E
N
T
(
A
)
f = 1.0 MHz
Vsig = 50mVp-p
T = 25 C
A
SS22-24
SS25-26
SS28 - S210
Reverse Characteristics
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
NORMALIZED REVERSE VOLTAGE (%)
R
EVE
R
S
E
C
U
R
R
EN
T
(
m
A
)
T = 100 C
A
T = 75 C
A
T = 25 C
A
SS22-24
SS25-S210
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
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As used herein:
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MICROWIRETM
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QSTM
Quiet SeriesTM
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SuperSOTTM-6
SuperSOTTM-8
TinyLogicTM
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be reasonably expected to cause the failure of the life
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