November 2001
2001 Fairchild Semiconductor Corporation
Si6466DQ Rev C(W)
Si6466DQ
20V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor's advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (2.5V to 12V).
Applications
Battery protection
DC/DC conversion
Power management
Load switch
Features
7.8 A, 20 V
R
DS(ON)
= 15 m
@ V
GS
= 4.5 V
R
DS(ON)
= 22 m
@ V
GS
= 2.5 V
Extended V
GSS
range (
12V) for battery applications
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D
S
S
G
D
S
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source
Voltage
20
V
V
GSS
Gate-Source
Voltage
12
V
I
D
Drain Current Continuous
(Note 1)
7.8 A
Pulsed
30
P
D
Power
Dissipation
(Note 1a)
1.4 W
(Note 1b)
1.1
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
87
C/W
(Note 1b)
114
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6466 Si6466DQ
13''
16mm
3000
units
Si6466DQ
Si6466DQ Rev C(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V,
I
D
= 250
A
20 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
14
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 20 V,
V
GS
= 0 V
1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
=55
C
25
I
GSSF
GateBody
Leakage,
Forward V
GS
= 12 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody
Leakage,
Reverse V
GS
= 12 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
0.6 1.0 1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25C
3.5
mV/
C
R
DS(on)
Static
DrainSource
OnResistance
V
GS
= 4.5 V, I
D
= 7.8 A
V
GS
= 2.5 V, I
D
= 6.3 A
12
19
15
22
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 5 V
20
A
g
FS
Forward
Transconductance V
DS
= 10 V,
I
D
= 7.8 A
33
S
Dynamic Characteristics
C
iss
Input
Capacitance
1320 pF
C
oss
Output
Capacitance
396
pF
C
rss
Reverse
Transfer
Capacitance
V
DS
= 10 V,
V
GS
= 0 V,
f = 1.0 MHz
211 pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
7
14
ns
t
r
TurnOn Rise Time
12
22
ns
t
d(off)
TurnOff
Delay
Time
30
48
ns
t
f
TurnOff Fall Time
V
DD
= 10 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
11 20 ns
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= 1.5 A,
dI
F
/dt = 100A/
s
23
80
ns
Q
g
Total
Gate
Charge
14
20
nC
Q
gs
GateSource
Charge
3 nC
Q
gd
GateDrain
Charge
V
DS
= 10 V,
I
D
= 7.8 A,
V
GS
= 4.5 V
4.5 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
1.5
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.5 A
(Note 2)
0.7
1.1 V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 87C/W
when
mounted on a 1in
2
pad
of 2 oz copper.
b)
114C/W when mounted
on a minimum pad of 2 oz
copper.
c)
Scale 1 : 1 on letter size
paper
2.Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
Si6466DQ
Si6466DQ Rev C(W)
Typical Characteristics
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
3.5V
2.5V
3.0V
V
GS
= 4.5V
2.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
V
GS
= 2.5V
3.5
3.0V
4.0V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
I
D
= 7.8A
V
GS
=4.5V
0.005
0.013
0.021
0.029
0.037
0.045
0.053
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
,
O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= 4A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DRAI
N CURRE
NT
(A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6466DQ
Si6466DQ Rev C(W)
Typical Characteristics
0
1
2
3
4
5
0
4
8
12
16
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
TE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= 7.8A
V
DS
= 5V
15V
10V
0
300
600
900
1200
1500
1800
2100
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANCE
(
pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
JA
= 114
o
C/W
T
A
= 25
o
C
10ms
1ms
100us
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
P
E
AK TRANS
IE
NT P
O
WE
R (
W
)
SINGLE PULSE
R
JA
= 114C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(t),
NO
RM
ALI
Z
E
D
E
FFE
CT
IVE T
R
A
N
SIEN
T
T
H
ER
M
A
L
R
ESIST
ANCE
R
JA
(t) = r(t) * R
JA
R
JA
=
114
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6466DQ
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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