TN3019A
TN3019A
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 500 mA
and collector voltages up to 80 V. Sourced from Process 12.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
80
V
V
CBO
Collector-Base Voltage
140
V
V
EBO
Emitter-Base Voltage
7.0
V
I
C
Collector Current - Continuous
1.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
TN3019A
P
D
Total Device Dissipation
Derate above 25
C
1.0
8.0
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
50
C/W
TO-226
C
B
E
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
TN3019A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
ON CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 30 mA, I
B
= 0
80
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
140
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
7.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 90 V, I
E
= 0
V
CB
= 90 V, I
E
= 0, T
A
= 150
C
0.01
10
A
A
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
0.01
A
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
=150 mA, V
CE
=10 V,T
A
= -55
C
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 1.0 A, V
CE
= 10 V*
50
90
100
40
50
15
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.2
0.5
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
1.1
V
f
T
Current Gain - Bandwidth Product
I
C
= 50 mA, V
CE
= 10 V,
f = 20 MHz
100
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
12
pF
C
ibo
Input Capacitance
V
BE
= 0.5 V, I
C
= 0, f = 1.0 MHz
60
pF
h
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 MHz
80
400
rb'C
c
Collector Base Time Constant
I
E
= 10 mA, V
CB
= 10 V,
f = 4.0 MHz
400
pS
NF
Noise Figure
I
C
= 100 mA, V
CE
= 10 V,
R
S
= 1.0 k
, f = 1.0 kHz
4.0
dB
TN3019A
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
P 12
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
C
C
ESA
T
25 C
- 40 C
125 C
= 10
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
1000
0
0.4
0.8
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE
EM
IT
T
E
R
VO
L
T
A
G
E
(
V
)
C
B
ESA
T
= 10
25 C
- 40 C
125 C
NPN General Purpose Amplifier
(continued)
Collector-Cutoff Current
vs. Ambient Temperature
25
50
75
100
125
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I
-
CO
L
L
E
CT
O
R
CUR
RE
NT
(
n
A
)
A
CB
O
V = 80V
CB
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
1000
0
50
100
150
200
250
300
350
I - COLLECTOR CURRENT (mA)
h
-
T
YPI
C
A
L
PU
L
SED
C
U
R
R
E
N
T
G
A
IN
C
FE
125 C
25 C
- 40 C
V = 1V
CE
Base Emitter ON Voltage vs
Collector Current
P 12
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
EM
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
O
N
V = 1V
CE
25 C
- 40 C
125 C
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
P 12
0.1
1
10
50
0
20
40
60
80
100
REVERSE BIAS VOLTAGE (V)
CA
P
A
C
I
T
A
NC
E
(
p
F
)
C cb
C
eb
f = 1.0 MHz
TN3019A
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
PO
W
E
R
D
I
SSI
PA
T
I
O
N
(W
)
D
o
TO-226
Small Signal Current Gain at 20 MHz
P 12
1
10
100
500
0
2
4
6
8
10
I - COLLECTOR CURRENT (mA)
h
- S
M
AL
L
S
I
G
N
A
L
CU
RR
E
N
T
G
A
I
N
f = 20 MHz
V = 1.0V
CE
V = 10V
CE
C
FE
Switching Times vs
Collector Current
10
100
500
1000
0
200
400
600
800
1000
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
s
)
t f
C
t d
t r
t s
Turn On and Turn Off Times vs
Collector Current
P 12
10
100
500
1000
0
200
400
600
800
1000
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
s
)
I = I = I
V = 50V 10
t off
t
B1
C
B2
CC
on
C
TN3019A
NPN General Purpose Amplifier
(continued)
Test Circuit
To Sampling Scope
Rise Time
5.0 ns
Input Z
100 k
Pulse Source
Rise Time
5.0 ns
Fall Time
10 ns
1.0 K
- 4.0 V
50 V
50
R
b
- 1
F
1.5
S
0 V
10 V
R
L
R
b
R
L
I
C
314
157
94
150 mA
200 mA
500 mA
330
167
100
FIGURE 1:
t
ON
, t
OFF
Test Circuit
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