TN6715A / NZT6715
TN6715A
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
NZT6715
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
50
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
1.5
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
TN6715A
*NZT6715
P
D
Total Device Dissipation
Derate above 25
C
1.0
8.0
1.0
8.0
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
50
C/W
R
JA
Thermal Resistance, Junction to Ambient
125
125
C/W
B
C
C
SOT-223
E
TO-226
C
B
E
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
TN6715A / NZT6715
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 10 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
50
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
5.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 50 V, I
E
= 0
0.1
A
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
0.1
A
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 1.0 A, V
CE
= 1.0 V
55
60
50
250
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 100 mA
0.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 1.0 A, V
CE
= 1.0 V
1.2
V
SMALL SIGNAL CHARACTERISTICS
h
fe
Small-Signal Current Gain
I
C
= 50 mA, V
CE
= 10 V,
f = 20 MHz
2.5
20
C
cb
Collector-Base Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
30
pF
*
Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
P 38
0.01
0.1
1
3
0
0.1
0.2
0.3
0.4
0.5
0.6
I - COLLECTOR CURRENT (A)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
C
ESA
T
C
= 10
125
C
- 40 C
25C
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
1
2
0
100
200
300
400
500
I - COLLECTOR CURRENT (A)
h
-
TY
P
I
C
A
L P
U
LS
E
D
C
U
R
R
E
N
T
G
A
I
N
FE
- 40 C
25 C
C
V = 5V
CE
125 C
NPN General Purpose Amplifier
(continued)
TN6715A / NZT6715
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Base-Emitter ON Voltage vs
Collector Current
Pr38
0.001
0.01
0.1
1
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (A)
V
-
B
A
SE-
EM
IT
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
B
E(ON
)
C
V = 5V
CE
125
C
- 40 C
25C
Base-Emitter ON Voltage vs
Collector Current
P 38
0.001
0.01
0.1
1
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (A)
V
-
B
A
SE-
EM
IT
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
B
E(ON
)
C
V = 5V
CE
125
C
- 40 C
25C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
- CO
L
L
E
C
T
O
R
CU
RRE
N
T
(
n
A)
A
V = 40V
CB
CBO
Collector-Base Capacitance
vs Collector-Base Voltage
Pr 38
0
4
8
12
16
20
24
28
0
10
20
30
40
V - COLLECTOR-BASE VOLTAGE (V)
C
- CO
L
L
E
CT
O
R
-
BAS
E
CAP
AC
I
T
AN
CE
(p
F
)
C B
OB
O
Gain Bandwidth Product
vs Collector Current
1
10
100
1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
G
A
I
N
BAN
DW
I
D
T
H
P
R
O
DUC
T
(
M
Hz
)
C
FE
V = 10V
CE
Safe Operating Area TO-226
Pr38
1
10
100
0.01
0.1
1
10
V - COLLECTOR-EMITTER VOLTAGE (V)
I
-
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(
A
)
CE
C
*PULSED
OPERATION
T = 25 C
A
LIMIT DETERMINED
BY BV
CEO
DC T
=
25
C
CO
LLE
CT
OR L
EAD
DC T
=
25
C
AM
BIEN
T
100
S*
10
S*
1.
0 m
s*
TN6715A / NZT6715
Typical Characteristics
(continued)
NPN General Purpose Amplifier
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
- P
O
W
E
R
DI
S
S
I
P
A
T
I
O
N (W
)
D
o
TO-226
SOT-223
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