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Электронный компонент: U9310

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P-CHANNEL
POWER MOSFET
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P-CHANNEL
POWER MOSFET
!
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% & !
10
-1
10
0
10
1
10
-2
10
-1
10
0
@ Notes :
1. 250
s Pulse Test
2. T
C
= 25
o
C







-I
D
, Dr
ai
n Cu
rr
en
t [A
]
-V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-2
10
-1
10
0
25
o
C
150
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= -50 V
3. 250
s Pulse Test
-I
D
,
Drain
Curr
ent
[A]
-V
GS
, Gate-Source Voltage [V]
0
1
2
3
4
5
6
0
3
6
9
12
15
@ Note : T
J
= 25
o
C
V
GS
= -20 V
V
GS
= -10 V
R
DS
(o
n)
, [
]
Dr
ai
n-
So
ur
ce
O
n
-
Res
is
ta
nc
e
-I
D
, Drain Current [A]
10
0
10
1
0
200
400
600
800
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Ca
pa
ci
ta
nc
e
[
p
F
]
-V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
10
-2
10
-1
10
0
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
s Pulse Test
-I
DR
,
Rever
se Dr
ain C
urren
t [A
]
-V
SD
, Source-Drain Voltage [V]
0
5
10
15
20
0
5
10
V
DS
= -320 V
V
DS
= -200 V
V
DS
= -80 V
@ Notes : I
D
= -1.5 A
-V
GS
,
Gate-
Sourc
e Vol
tage
[V]
Q
G
, Total Gate Charge [nC]
P-CHANNEL
POWER MOSFET
' ()#$ *
+ & *
*&
, -. ! *
/ -. 0
P
DM
t
1
t
2
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= -250
A
BV
DS
S
,
(
Nor
mal
iz
ed)
Dr
ai
n-S
our
ce
Br
ea
kdo
wn
Vo
lta
ge
T
J
, Junction Temperature [
o
C]
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
@ Notes :
1. V
GS
= -10 V
2. I
D
= -0.75 A
R
DS
(o
n)
,
(No
rma
liz
ed)
Dr
ain-
Sou
rce
On-
Res
ist
ance
T
J
, Junction Temperature [
o
C]
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
DC
100
s
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
-I
D
,
D
rai
n C
u
r
ren
t
[A
]
-V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
-I
D
,
Dra
in
Cur
rent
[
A
]
T
c
, Case Temperature [
o
C]
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
10
- 1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
J C
(t)=3.5
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
C
=P
D M
*Z
J C
(t)
Z
JC
(t)
,
Therm
al R
espon
se
t
1
, Square Wave Pulse Duration [sec]
P-CHANNEL
POWER MOSFET
12*
% &$ 12*
" 3*#4#$ 12*
! "!# $ %