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Электронный компонент: EB750SOT343BA

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EB750SOT343BA
FP750SOT343 1.85GHz LNA EVALUATION BOARD
FEATURES
19 dBm Output Power
17 dB Small Signal Gain
0.8 dB Noise Figure
37 dBm IP3
Bias 3.3V, 110mA
DESCRIPTION AND APPLICATIONS
This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
matched at a frequency of 1.85 GHz. The active device is a Filtronic FP750SOT343; a
double-heterojunction, 750
m gate periphery PHEMT. The connectors are SMA jacks
soldered to a 30 mil thick FR4 PC Board. Both RF ports are DC-decoupled.
Biasing can be applied through test clips (E-Z hooks) at the bias vias on the bottom of the
board. A negative gate voltage is required for current limiting. Ground connection should
be established prior to the gate and drain bias connections. This board is thin and flexible,
so caution should be exercised when connecting it to coaxial cables.
SCHEMATIC
33pF
33pF
200 Ohm
15pF
15pF
0.01uF
0.01uF
1.0uF
Vd
-Vg
FP750SOT343 EVAL Board
Schematic
22 nH
22 nH
L1
L2
C2
@ 1.85GHz
RF IN
RF OUT
FSS Santa Clara Operations 3251 Olcott Street, Santa Clara, CA 95054
408.988.1331 www.filss.com sales@filss.com