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Электронный компонент: FMS2018

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Advanced Product Information
1.2
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2018
SP7T GaAs Multi-Band GSM UMTS Antenna Switch

Features:
Functional Schematic
Available in die form
Suitable for multi-band GSM/DCS/PCS/
EDGE and UMTS applications
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS power levels
Very high Tx-Rx isolation >35dB typ. at
1.8GHz
Very high Tx-Tx isolation >30dB typ. at
1.8GHz
Very low Tx Insertion loss
Very low control current
Description and Applications:
The FMS2018 is a low loss, high power and linear single pole seven throw Gallium Arsenide antenna
switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05
0.5
m switch process technology which offers leading edge performance optimised for switch
applications. The FMS2018 is designed for use in dual/tri and quad-band GSM handset antenna
switch modules and RF front-end modules.
Electrical Specifications:
(T
AMBIENT
= 25C,V
control
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Min
Typ
Max
Units
Tx Insertion Loss
0.5 1.0 GHz
1.0 2.0 GHz
0.5
0.6
dB
dB
Rx Insertion Loss
0.5 1.0 GHz
1.0 2.0 GHz
0.6
0.8
dB
dB
Return Loss
0.5 2.5 GHz
20
dB
Isolation
TX-RX
0.5 1.0 GHz
1.0 2.0 GHz
40
35
dB
dB
Isolation
TX-TX
0.5 1.0 GHz
1.0 2.0 GHz
33
30
dB
dB
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33 dBm, 100% Duty Cycle
-75
-75
dBc
dBc
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33 dBm, 100% Duty Cycle
-75
-75
dBc
dBc
Switching speed : Trise, Tfall
Ton, Toff
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
< 0.3
< 1.0
s
s
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)
ANT
TX3
VTX3
RX1
RX2
RX3
RX4
VRX1
VRX2
VRX3
VRX4
VRXC
TX1
VTX1
TX2
VTX2
ANT
TX3
VTX3
RX1
RX2
RX3
RX4
VRX1
VRX2
VRX3
VRX4
VRXC
TX1
VTX1
TX2
VTX2
Advanced Product Information
1.2
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2018
Truth Table:
VTx1
VTx2
VTx3
VRx1
VRx2
VRx3
VRx4
VM
ON PATH
High Low Low Low
Low
Low
Low
Low ANT-TX1
Low High Low Low
Low
Low
Low
Low ANT-TX2
Low Low High
Low
Low
Low
Low
Low
ANT-TX3
Low Low Low
High
Low
Low
Low
High
ANT-RX1
Low Low Low Low
High
Low
Low
High
ANT-RX2
Low Low Low Low
Low
High
Low
High
ANT-RX3
Low Low Low Low
Low
Low
High
High
ANT-RX4
Note: `High' = +2.5V to +5V
`Low' = 0V to +0.2V
Pad and Die Layout:





















Note: Co-ordinates are referenced from the
bottom left hand corner of the die to the centre
of the bond pad opening
Die Size (
m)
Die Thickness (
m)
Min. Bond Pad
Pitch(
m)
Min. Bond pad
opening (
m)
1230 x 1250
100
88
70 x 70
Pad
Pad
Name
Description
Pin
Coordinates
(m)
A ANT
Antenna
698,
1167
B
Tx1
TX1 RF Output
183, 110
C
Tx2
TX2 RF Output
182, 498
D
Tx3
TX3 RF Output
184, 1147
E
Rx1
RX1 RF Output
1066, 536
F
Rx2
RX2 RF Output
1063, 663
G
Rx3
RX3 RF Output
1063, 993
H
Rx4
RX4 RF Output
1066, 1126
I
VTX1
TX1 Control Voltage
693, 102
J
VTX2
TX2 Control Voltage
798, 102
K
VTX3
TX3 Control Voltage
903, 102
L
VRX1
RX1 Control Voltage
995, 633
M
V RX2
RX2 Control Voltage
1066, 326
N
V RX3
RX3 Control Voltage
1066, 427
O
V RX4
RX4 Control Voltage
1008, 102
P VRXC Common Receive Switch
Control Voltage
1113, 102
Q
GND T1
Ground 1
178, 392
R
GND T2
Ground 2
184, 764
S
GND T3
Ground 3
184, 877
T
GND Rc
Ground 4
1066, 771
D
E
F
L
G

Q
P


N
K
J
I
H
T


S
R
O
M
A
B
C
Advanced Product Information
1.2
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2018
Simulated Performance:
TX ON


Advanced Product Information
1.2
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2018

RX ON

Advanced Product Information
1.2
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2018
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be
used where possible.

The back of the die is not metallised and the recommended mounting method is by the use of
conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid
encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height.
For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1
LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150
C for 1 hour in
an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with
dry nitrogen.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is
recommended that 25.4
m diameter gold wire is used. Thermosonic ball bonding is preferred. A
nominal stage temperature of 150C and a bonding force of 40g has been shown to give effective
results for 25um wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique,
stage temperature should not be raised above 200C and bond force should not be raised above 60g.
Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve
good wire bonds.

Bonds should be made from the die first and then to the mounting substrate or package. The physical
length of the bondwires should be minimised especially when making RF or ground connections.

Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No.
22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.

Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.