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Электронный компонент: FMS2020-001

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Preliminary Data Sheet
2.2
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email:
sales@filcsi.com
Website: www.filtronic.co.uk/semis
FMS2020QFN
GaAs Multi-Purpose Wide Band SPDT Switch

Features:
3x3x0.9mm Packaged pHEMT Switch
Suitable for L, S, and C-band digital
cellular, cordless telephony and WLAN
applications
High isolation, 25dB typ at 2.5GHz
Low insertion loss, 0.5dB typ at 2.5GHz
Low insertion loss, 1.0dB typ at 6GHz
P0.1dB > 38dBm at 2GHz
Functional Schematic
Description and Applications:
The FMS2020QFN is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna
switch. The die is fabricated using the Filtronic FL05 0.5
m switch process technology, which offers leading
edge performance optimised for switch applications. The FMS2020QFN is designed for use in L, S, and C
band wireless applications and WLAN access points where high linearity switching is required.
Electrical Specifications:
(T
AMBIENT
= 25C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Min
Typ
Max
Units
Insertion Loss
0.5 1.0 GHz
1.0 2.0 GHz
2.0 3.0 GHz
3.0 4.0 GHz
4.0 5.0 GHz
5.0 6.0 GHz
0.4
0.45
0.55
0.65
0.75
0.95
dB
dB
dB
dB
dB
dB
Return Loss
0.5 2.5 GHz
2.5 5.0 GHz
23
18
dB
dB
Isolation
0.5 1.0 GHz
1.0 2.5 GHz
2.5 6.0 GHz
30
25
18
dB
dB
dB
Input power at 0.1dB compression point
1.0 GHz
2.0 GHz
2.5 GHz
6.0 GHz
>38
>38
>37
>33
dBm
dBm
dBm
dBm
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
<-70
dBc
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
<-70
dBc
Switching speed : T rise, T fall
T on, T off
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
<0.3
<1.0
s
s
Control Current
+35dBm RF input @1GHz
<10
A

Note:
External DC blocking capacitors are required on all RF ports (typ: 100pF)
All unused ports terminated in 50
.
ANT
V1
RF1
V2
RF2
Preliminary Data Sheet
2.2
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email:
sales@filcsi.com
Website: www.filtronic.co.uk/semis
FMS2020QFN
Absolute Maximum Ratings:
Parameter
Symbol
Absolute Maximum
Max Input Power
Pin
+38dBm
Control Voltage
V ctrl
+5V
Operating Temperature
T oper
-40C to +100C
Storage Temperature
T stor
-55C to +150C

Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.

Truth Table:
Switch
State
VC1
VC2
ANT RF1
ANT RF2
(A)
HIGH
LOW
Insertion Loss
Isolation
(B) LOW
HIGH
Isolation
Insertion Loss


General Test Conditions:





Bias Voltages
LOW = 0V to 0.2V
HIGH +2.5V to +5V
Port Impedances
50
Off arm termination
50
Preliminary Data Sheet
2.2
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 988 1845 Fax: +1 (408) 970 9950 Email:
sales@filcsi.com
Website: : www.filtronic.co.uk/semis
FMS2020QFN
4.5
5
5.5
6
Frequency (GHz)
FMS2020QFN RF1 TO RF2 ISOLATION 802 11a bands
-30
-25
-20
-15
-10
dB
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2020QFN RF1 TO RF2 ISOLATION DC to 3Ghz
-35
-30
-25
-20
-15
dB
4.5
5
5.5
6
Frequency (GHz)
FMS2020QFN INSERTION LOSS 802 11a bands
-1.5
-1.4
-1.3
-1.2
-1.1
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
dB
4.5
5
5.5
6
Frequency (GHz)
FMS2020QFN RETURN LOSS 802 11a bands
-40
-35
-30
-25
-20
-15
-10
dB
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2020QFN RETURN LOSS DC to 3Ghz
-40
-35
-30
-25
-20
-15
-10
dB
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2020QFN INSERTION LOSS DC to 3 Ghz
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
dB
Typical Measured Performance on Evaluation Board (De-Embedded):
(Measurement Conditions V
CTRL
= 2.5V (high) & 0V (low), T
AMBIENT
= 25C unless otherwise stated)
Preliminary Data Sheet
2.2
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 988 1845 Fax: +1 (408) 970 9950 Email:
sales@filcsi.com
Website: : www.filtronic.co.uk/semis
FMS2020QFN
Pad Layout:












*View from the top of the package
QFN 12 Lead 3*3 Package Outline:
Pin Number
Description
1 N/C
2 N/C
3 RF1
4 N/C
5 N/C
6 N/C
7 RF2
8 N/C
9 N/C
10 V2
11 ANT
RF
12 V1
PADDLE GND
8
6
V1
3
4
5
12
Pin 1
RF1
V2
RF2
ANT
2
7
9
10
11


PADDLE
Preliminary Data Sheet
2.2
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 988 1845 Fax: +1 (408) 970 9950 Email:
sales@filcsi.com
Website: : www.filtronic.co.uk/semis
FMS2020QFN
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
FMS2020QFN CAL BOARD MATCH
-40
-37.5
-35
-32.5
-30
-27.5
-25
-22.5
-20
-17.5
-15
-12.5
-10
dB
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
FMS2020QFN CAL BOARD INSERTION LOSSES
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
dB
Evaluation Board:




Evaluation Board De-Embedding Data (Measured):
BOM
Label
Component
C3,C4
Capacitor, 470pF, 0603
C1,C2
Capacitor, 100pF, 0402
C5,C6 Capacitor,
47pF,
0402
BOARD
Preferred evaluation board material is 0.25 mm thick
ROGERS RT4350. All RF tracks should be 50 ohm
characteristic impedance.