PRELIMINARY
FPD10000AF
10W
P
ACKAGED
P
OWER P
HEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 12/07/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
PERFORMANCE (1.8 GHz)
40 dBm Output Power (P
1dB
)
11 dB Power Gain (G
1dB
)
-44 dBc WCDMA ACPR at 30 dBm output power
180 to 300 mA typical quiescent current (I
DQ
)
55% Power-Added Efficiency
Evaluation Boards Available
Additional Design Data Available on Website
Usable Gain to 3.8GHz
DESCRIPTION AND APPLICATIONS
The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-
mount package has been optimized for low electrical parasitics and optimal heatsinking.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
ELECTRICAL SPECIFICATIONS AT 22C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Class B Operation
P
1dB
V
DS
= 12V; I
DQ
= 180 mA
40 dBm
Power Gain at dB Gain Compression
G
1dB
V
DS
= 12V; I
DQ
= 180 mA
V
DS
= 12V; I
DQ
= 300 mA
10
11
dB
Maximum Stable Gain: S
21
/S
12
P
IN
= 0dBm, 50
system
MSG V
DS
= 12 V; I
DQ
= 180 mA
V
DS
= 12 V; I
DQ
= 300 mA
16.5
18.0
dB
Power-Added Efficiency
at 1dB Gain Compression
PAE V
DS
= 12V; I
DQ
= 180 mA
I
RF
(drive-up current) ~ 1.5A
55 %
Adjacent Channel Power Ratio
WCDMA BTS Forward (64 channels)
10.15 dB Pk/Avg 0.001%
ACPR
V
DS
= 12V; I
DQ
= 180 mA
Channel power = 30 dBm
-44
dBc
Saturated Drain-Source Current
I
DSS
V
DS
= 3.0 V; V
GS
= 0 V
5.2
A
Gate-Source Leakage Current
I
GSO
V
GS
= -3 V
3
mA
Pinch-Off Voltage
|V
P
| V
DS
= 3.0 V; I
DS
= 19 mA
1.1
V
Gate-Drain Breakdown Voltage
|V
BDGD
| I
GD
= 19 mA
30
35
V
Thermal Resistivity (channel-to-case)
CC
See Note on following page
3.5
C/W
SEE PACKAGE
OUTLINE FOR
MARKING CODE
PRELIMINARY
FPD10000AF
10W
P
ACKAGED
P
OWER P
HEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 12/07/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage:
From 10 to 12V
Quiescent Current:
From 180 (Class B) to 300 mA (Class AB) operation
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
-3V < V
GS
< +0V
16
V
Gate-Source Voltage
V
GS
0V < V
DS
< +15V
-3
V
Drain-Source Current
I
DS
For V
DS
> 2V
50% I
DSS
mA
Gate Current
I
G
Forward / Reverse current
+50/-8
mA
RF Input Power
2
P
IN
Under any acceptable bias state
1.75
W
Channel Operating Temperature
T
CH
Under any acceptable bias state
175
C
Storage Temperature
T
STG
Non-Operating Storage
-40
150
C
Total Power Dissipation
P
TOT
See De-Rating Note below
42
W
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits
3
2 or more Max. Limits
80
%
1
T
Ambient
= 22
C unless otherwise noted
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where:
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Total Power Dissipation to be de-rated as follows above 22C:
P
TOT
= 42 - (0.286W/
C) x T
PACK
where T
PACK
= source tab lead temperature above 22
C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55
C Source flange temperature: P
TOT
= 42 - (0.286 x (55 22)) = 32.6W
Note on Thermal Resistivity: The nominal value of 3.5C/W is measured with the package mounted on a large
heatsink with thermal compound to ensure adequate contact. The package temperature is referred to the Source
flange.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
PRELIMINARY
FPD10000AF
10W
P
ACKAGED
P
OWER P
HEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 12/07/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
BIASING GUIDELINES
Dual-bias (separate positive Drain and negative Gate supplies) circuits are recommended,
requiring a regulated negative voltage supply for depletion-mode devices such as the
FPD10000AF. The Gate bias supply should be capable of sinking / sourcing at least 10mA of
current. The bias circuitry must be properly sequenced to ensure that the control Gate voltage
(typically -0.6 to -1.0V) is applied to the device before the Drain voltage, otherwise large
amounts of Drain-Source current will be drawn, potentially leading to instability and self-
oscillation.
The recommended 180 300 mA bias point is nominally a Class B/AB mode. A small amount
of RF gain expansion prior to the onset of compression is normal for this operating point, and
significant current drive-up should be expected. If a Class A operation is desired, users should
check the de-rating limits given in the previous section to ensure reliable operation.
PACKAGE OUTLINE
(dimensions in millimeters mm)
All information and specifications subject to change without notice.
PACKAGE MARKING CODE
Example:
f1ZD
P3F
f = Filtronic
1ZD = Lot and Date Code
P2F = Status, Part Code, Part Type
Status: D=Development P = Production
Part Code denotes model (e.g. FPD10000AF)
Part Type: F = FET (pHEMT)
PDF 
ZIP