LP3000SOT89
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 1/16/02
Fax: (408) 970-9950
Email: sales@filss.com
FEATURES
29 dBm Output Power at 1-dB Compression at 1.8 GHz
15 dB Power Gain at 1.8 GHz
1.3 dB Noise Figure
46 dBm Output IP3 at 1.8 GHz
55% Power-Added Efficiency
DESCRIPTION AND APPLICATIONS
The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25
m x 3000
m Schottky barrier gate, defined by electron-beam photolithography. The recessed
"mushroom" gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP3000 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
LP3000SOT89-1
I
DSS
V
DS
= 2 V; V
GS
= 0 V
800
860
924
mA
LP3000SOT89-2
925
975
1024
mA
LP3000SOT89-3
1025
1060
1100
mA
Power at 1-dB Compression
P-1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
28
29
dBm
Power Gain at 1-dB Compression
G-1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
14
15
dB
Power-Added Efficiency
PAE
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
IN
= 15 dBm
55
%
Noise Figure
NF
V
DS
= 5 V; I
DS
= 50% I
DSS
1.3
dB
Output Third-Order Intercept Point
IP3
V
DS
= 5V; I
DS
= 50% I
DSS
;
P
IN
= 3 dBm
46
dBm
Maximum Drain-Source Current
I
MAX
V
DS
= 2 V; V
GS
= 1 V
1700
mA
Transconductance
G
M
V
DS
= 2 V; V
GS
= 0 V
700
900
mS
Gate-Source Leakage Current
I
GSO
V
GS
= -5 V
15
200
A
Pinch-Off Voltage
V
P
V
DS
= 2 V; I
DS
= 15 mA
-0.25
-1.2
-2.0
V
Gate-Source Breakdown
Voltage Magnitude
|V
BDGS
|
I
GS
= 15 mA
-10
-12
V
Gate-Drain Breakdown
Voltage Magnitude
|V
BDGD
|
I
GD
= 15 mA
-10
-13
V
frequency=1.8 GHz
LP3000SOT89
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 1/16/02
Fax: (408) 970-9950
Email: sales@filss.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
T
Ambient
= 22
3
C
7
V
Gate-Source Voltage
V
GS
T
Ambient
= 22
3
C
-4
V
Drain-Source Current
I
DS
T
Ambient
= 22
3
C
I
DSS
mA
Gate Current
I
G
T
Ambient
= 22
3
C
30
mA
RF Input Power
P
IN
T
Ambient
= 22
3
C
1
W
Channel Operating Temperature
T
CH
T
Ambient
= 22
3
C
175
C
Storage Temperature
T
STG
--
-65
175
C
Total Power Dissipation
P
TOT
T
Ambient
= 22
3
C
3.75
W
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25
C:
P
TOT
= 3.75W (0.025W/
C) x T
HS
where T
PACK
= source tab lead temperature..
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
OPTIMUM POWER OUTPUT MATCHING
Load State
Frequency (GHz)
Magnitude
Phase
1.8
0.77
-154
2.2
0.68
-150
2.5
0.59
-143
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
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