Advanced Schottky Barrier Diodes
ASD500V-N
Surface mount small signal type
Features
Extermely low VF
Extermely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case : Molded plastic, JEDEC SOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.000159 ounce, 0.0045 gram
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Repetitive peak reverse voltage
V
RM
45
V
Continuous reverse voltage
V
R
40
V
Mean rectifying current
I
O
100
mA
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
1000
mA
Capacitance between terminals
f=1MHz and applied 10VDC reverse voltage
C
T
20
pF
Storage temperature
T
J
-40
+125
o
C
Operating temperature
T
STG
-40
+125
o
C
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 10 mA DC
V
F
0.45
V
Reverse current
V
R
= 10 V
I
R
1
uA
Formosa MS
SOD-323
0.106 (2.7)
0.090 (2.3)
0.012(0.3) Typ.
0.053 (1.35)
0.045 (1.15)
0.035 (0.9)
0.028 (0.7)
R0.5 (0.02) Typ.
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
a
=
1
2
5
C
Ta = 75 C
Ta = 25 C
Ta = -25 C
1m
10m
100m
pulse measurement
1u
10u
100u
1000m
Typ.
O
O
O
O
0
5
10
15
20
25
30
35
100n
10n
1n
Ta = 125 C
Ta = 75 C
Ta = 25 C
Ta = -25 C
pulse measurement
Typ.
100
10
1
REVERSE VOLTAGE , (V)
R
E
V
E
R
S
E
C
U
R
R
E
N
T
,
(
u
A
)
O
O
O
O
0 2 4 6 8 10 12 1 4
1
2
5
10
20
50
100
f = 1MHz
Ta = 25 C
REVERSE VOLTAGE , (V)
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
E
E
N
T
E
R
M
I
N
A
L
S
,
(
p
F
)
O
RATING AND CHARACTERISTIC CURVES (ASD500V-N)
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
CHARACTERISTICS
FIG.1-TYPICAL FORWARD
FORWARD VOLTAGE,(V)
FIG.2 - TYPICAL REVERSE
CHARACTERISTICS
FIG.3-TYPICAL TERMINALS CAPACITANCE
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