Advanced Schottky Barrier Diodes
BAT43WS
Surface mount small signal type
Extermely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case : Molded plastic, 0805
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.000159 ounce, 0.0045 gram
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Repetitive peak reverse voltage
V
RRM
40
V
RMS Reverse voltage
V
R(RMS)
21
V
Mean rectifying current
I
O
100
mA
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
4.0
A
Power dissipation
P
d
200
mW
Capacitance between terminals
f=1MHz and applied 10VDC reverse voltage
C
T
10
pF
Storage temperature
T
J
-55
+125
o
C
Operating temperature
T
STG
-55
+125
o
C
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 2.0 mA DC
V
F
0.26
0.33
V
Forward voltage
IF = 15 mA DC
V
F
0.45
V
Forward voltage
IF = 200 mA DC
V
F
1.00
V
Reverse current
V
R
= 25 V
I
R
500
nA
Reverse current
V
R
= 25 V , T
j
=100
o
C
I
R
100
uA
Formosa MS
0805
0.087 (2.2)
0.071 (1.8)
0.012(0.3) Typ.
0.055 (1.4)
0.039 (1.0)
0.043 (1.1)
0.028 (0.7)
R0.3 (0.012) Typ.
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
a
=
1
2
5
C
Ta = 75 C
Ta = 25 C
Ta = -25 C
1m
10m
100m
pulse measurement
1u
10u
100u
1000m
Typ.
O
O
O
O
0
5
10
15
20
25
30
35
100n
10n
1n
Ta = 125 C
Ta = 75 C
Ta = 25 C
Ta = -25 C
pulse measurement
Typ.
100
10
1
REVERSE VOLTAGE , (V)
R
E
V
E
R
S
E
C
U
R
R
E
N
T
,
(
u
A
)
O
O
O
O
0 2 4 6 8 10 12 1 4
1
2
5
10
20
50
100
f = 1MHz
Ta = 25 C
REVERSE VOLTAGE , (V)
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
E
E
N
T
E
R
M
I
N
A
L
S
,
(
p
F
)
O
RATING AND CHARACTERISTIC CURVES (ASD500V)
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
A
)
CHARACTERISTICS
FIG.1-TYPICAL FORWARD
FORWARD VOLTAGE,(V)
FIG.2 - TYPICAL REVERSE
CHARACTERISTICS
FIG.3-TYPICAL TERMINALS CAPACITANCE
PDF 
ZIP