Dual Series Switching Diode
BAL99W
BAW56W
BAV70W
BAV99W
Silicon epitaxial planar type
Features
Small surface mounting type
High reliability
High speed ( t
rr
< 1.5 ns )
Mechanical data
Case : SOT-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Mounting Position : Any
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Repetitive peak reverse voltage
V
RRM
70
V
Reverse voltage
V
R
70
V
Peak forward surge current
t
p
= 1 us
I
FSM
2.0
A
Repetitive peak forward current
I
FRM
450
mA
Forward current
I
F
215
mA
Average forward current
V
R
= 0
I
FAV
715
mA
Power dissipation
P
D
225
mW
Junction temperature
T
j
175
o
C
Storage temperature
T
STG
-55
+150
o
C
Formosa MS
SOT-323
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
I
F
= 10mA
V
F
0.855
V
I
F
= 150mA
V
F
1.250
V
V
R
= 70V
I
R
2.5
uA
V
R
= 20V , T
j
= 150
o
C
I
R
30
uA
V
R
= 70V , T
j
= 150
o
C
I
R
50
uA
Breakdown current
I
R
= 100uA , T
P
/T = 0.01 T
P
= 0.3ms
V
(BR)
70
V
Diode capacitance
V
R
= 0 , f = 1MHz , V
HF
= 50mV
C
D
1.5
pF
Reverse recovery time
I
F
=10mA, V
R
= 10mA, I
RR
= 0.1 X I
R
, R
L
=100
OHM
t
rr
6
ns
Forward voltage
Reverse current
0.031 (0.80)
0.043 (1.10)
R 0.05
(0.002)
0.055 (1.40)
0.047 (1.20)
0.089 (2.30)
0.079 (2.00)
0.017 (0.43)
MIN
(A)
(B)
(C)
0
.
0
8
7
(
2
.
2
0
)
0
.
0
7
1
(
1
.
8
0
)
.
0
5
1
(
1
.
3
0
)
M
I
N
0
.
0
2
6
(
0
.
7
0
)
M
I
N
.
0
.
0
1
6
(
0
.
4
0
)
0
.
0
1
2
(
0
.
3
0
)
SINGLE(Alt)
COMMON ANODE COMMON CATHODE
BAL99W
BAW56W
BAV70W
SERIES
BAV99W
0.0010 (0.25)
0.0004 (0.10)
RATING AND CHARACTERISTIC CURVES for each diode (BAL99W BAW56W BAV70W BAV99W)
Notes:
Notes:
t
Recovery Time Equivalent Test Circuit
820 OHM
+10V
2 K
0.1 uF
100uH
0.1 uF
DUT
50 OHM OUTPUT
PULSE
GENERATOR
50 OHM INPUT
SAMPLING
OSCILLOSCOPE
I
F
t
r
V
R
t
10%
90%
t
p
t
r
t
IR(REC)=1 mA
OUTPUT PULSE
(IF=IR=10mA;measured
at iR(REC)=1mA)
1. A2.0 Kohm variable resistor adjusted for a forward Current (IF) of 10mA.
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp >> trr.
Notes :
100
0.2
0.4
0.6
0.8
1.0
1.2
10
1.0
0.1
o
TA=85 C
o
TA=25 C
o
TA=-40 C
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
(
m
A
)
FORWARD VOLTAGE,(V)
10
0
1.0
0.1
0.01
0.001
10
20
30
40
50
o
TA=55 C
o
TA=85 C
o
TA=125 C
o
TA=150 C
o
TA=25 C
R
E
V
E
R
S
E
L
E
A
K
A
G
E
C
U
R
R
E
N
T
,
(
u
A
)
REVERSE VOLTAGE, (V)
FIG.2 - Leakage Current
CHARACTERISTICS
0.68
0
0.64
0.60
0.56
0.52
2
4
6
8
FIG.3-TYPICAL JUNCTION CAPACITANCE
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
,
(
p
F
)
REVERSE VOLTAGE,(V)
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